Samsung Electronics Co., Ltd.

Yonsei University

Byongmo Moon

Jihye Kim

Beomyong Kil

Sungoh Ahn

Seongook Jung

Je Min Ryu

Kyungmin Kim

Taesung Kim

Jiyoung Kim

Jaewoo Jeong

Yoon-Joo Eom

Yongcheol Bae

Jongsoo Lee

Buyeon Lee

Taegyeong Kim

Jeonghyeok You

Taeryeong Kim

Hohyun Chae

A method for using a high bandwidth memory controller includes providing a clock signal having a first clock frequency, providing a write strobe signal having a second clock frequency, providing a write command/address signal based on the clock signal, and providing a write data signal based on the write strobe signal. The first clock frequency is half of the second clock frequency, the write strobe signal has two cycles of pre-amble before the write data signal, and the write strobe signal has two cycles of post-amble after the write data signal.

Memory device transmitting and receiving data at high speed and low power

A transmitter circuit of an interface circuit includes a clock generating circuit, a pulse generating circuit, an overlapped multiplexing circuit, and an output circuit. The clock generating circuit generates a plurality of clocks having different phases. The pulse generating circuit generates a plurality of pulses based on the plurality of clocks. The overlapped multiplexing circuit receives a plurality of input signals in parallel, and sequentially outputs a plurality of overlapped signals based on the plurality of clocks, the plurality of input signals, and the plurality of pulses, and each overlapped signal includes bit values of two input signals among the plurality of input signals. The output circuit serially outputs bit values of the plurality of input signals in series based on the plurality of overlapped signal.

Transmitter circuit and receiver circuit of interface circuit and operating method thereof

An encoder includes an encoding unit configured to receive 2n-bit read data and to generate 2m-bit read data, and an output driver configured to input m-bit first read data of the 2m-bit read data, to transmit voltage and/or current a first number of times corresponding to a number of first bits indicating a first state included in the m-bit first read data or to transmit current corresponding to the number of first bits during an activation period of a clock signal, and to transmit the voltage and/or the current a second number of times corresponding to a number of second bits indicating the first state included in m-bit second read data of the 2m-bit read data or to transmit current corresponding to the number of second bits during a deactivation period of the clock signal, wherein n is at least 2 and m is at least 3.

Encoders, decoders, and semiconductor memory devices including the same

An apparatus for correcting an error of a clock signal may include a phase adjuster that corrects an error of half-rate clock signals based on an error correction signal to output an error-corrected clock signal, a phase splitter that outputs quadrature clock signals from the error-corrected clock signal, an error detector that outputs an internal clock signal based on one of the quadrature clock signals, selects two quadrature clock signals among the quadrature clock signals based on a clock selection signal, and detects errors of the two quadrature clock signals based on an error check signal to output a correction request signal, and a controller that outputs a mode selection signal and the clock selection signal based on the internal clock signal and that outputs the error correction signal and the error check signal based on the mode selection signal, the clock selection signal, and the correction request signal.

Apparatus for correcting error of clock signal

In some embodiments, a memory device includes a data sampler configured to sample a data signal based on a write data strobe signal, a measuring circuit configured to measure a temperature-based delay variation and a voltage-based delay variation of a transfer path of the write data strobe signal, a storage circuit configured to store a first coefficient code regulating a reference-based delay variation on the transfer path, a temperature sensor configured to sense the temperature of the transfer path, a monitoring circuit configured to generate a second coefficient code by comparing the sensed temperature, the temperature-based delay variation, the voltage-based delay variation, and the reference-based delay variation with each other, a reference voltage generator configured to generate a reference voltage, a voltage regulator configured to generate a regulation voltage, and a write data strobe signal transfer circuit configured to transfer the write data strobe signal to the data sampler.

Memory device, operating method of the memory device, and memory system including the same

A memory system includes a memory device configured to monitor a first oscillator count value for a write data strobe signal for sampling a data signal at a first temperature and a second oscillator count value for the write data strobe signal for sampling the data signal at a second temperature, and a memory controller configured to determine a weight based on the first oscillator count value and the second oscillator count value, wherein the memory device is configured to sample the data signal by adjusting a delay on a transfer path of the write data strobe signal according to a change in temperature of the memory device based on the weight.

Memory device for adjusting delay on data clock path, memory system including the memory device, and operating method of the memory system

A memory device includes: first power pins in a first power area and configured to receive a first power voltage; data pins configured to transmit or receive data signals, the data pins being arranged in a first region and in a second region each including the first power area; control pins configured to transmit or receive control signals in the first region and in the second region; second power pins in a second power area between the first region and the second region and configured to receive a second power voltage different from the first power voltage; and ground pins in the second power area and configured to receive a ground voltage.

Memory device for reducing resources used for training

A transmitter includes a multiplexer, control logic and a voltage mode driver. The multiplexer generates a plurality of time-interleaved data signals based on a plurality of input data signals and multi-phase clock signals. The plurality of input data signals are input in parallel. Each of the plurality of input data signals is a binary signal and has two voltage levels that are different from each other. The control logic generates at least one pull-down control signal and a plurality of pull-up control signals based on the plurality of time-interleaved data signals. Each of the plurality of pull-up control signals has a voltage level that is temporarily boosted. The voltage mode driver generates an output data signal based on the at least one pull-down control signal and the plurality of pull-up control signals. The output data signal is a duobinary signal and has three voltage levels that are different from each other.

Transmitter and receiver for low power input/output and memory system including the same

Disclosed is a memory device, which includes a buffer die that outputs a first power supply voltage to a first through-substrate via (e.g., through-silicon via (TSV)) and receives a small swing data signal from a second TSV generated based on the first power supply voltage, and a core die that is electrically connected to the buffer die through the first and second TSVs, includes a first cell capacitor electrically connected to the first TSV and configured to block a first noise introduced to the first power supply voltage received through the first TSV. The core die outputs the small swing data signal to the second TSV.

Memory device transmitting small swing data signal and operation method thereof

A memory device includes a control logic circuit, a write data strobe signal divider, a data transceiver, and a memory cell array. The control logic circuit generates a reset signal before a write data strobe signal provided from a memory controller starts to toggle. The write data strobe signal divider generates internal write data strobe signals that toggle depending on toggling of the write data strobe signal, the internal write data strobe signals toggling with different phases, respectively. The control logic circuit initializes the internal write data strobe signals to given values in response to the reset signal. The data transceiver receives write data provided from the memory controller based on the internal write data strobe signals. The memory cell array stores the received write data.

A memory device includes a pad region having a flag pad separated from an external host, and a signal pad connected to the external host. A bank region is provided having a plurality of memory cells therein. An on-die-termination (ODT) setting circuit is provided, which is configured to receive a control command including first data corresponding to termination resistance requested by the host, and a ODT enable signal. The setting circuit is configured to generate second data corresponding to the ODT resistance. An ODT enable circuit is provided, which is configured to output an ODT flag signal to the flag pad, in response to the control command and the ODT enable signal. A resistor circuit is provided, which is configured to connect the ODT resistance to the signal pad using the second data.

Packaged integrated circuit memory devices having enhanced on-die-termination circuits therein and methods of operating same

A memory device includes a memory cell array including a plurality of memory cells storing data, a sense amplifier connected to the memory cell array, and a voltage controller. The voltage controller includes a voltage driver that generates a control signal and an overdrive controller that generates an overdrive control signal that regulates the generating of the control signal in response to at least one of a result of a comparison between the control signal and a reference voltage, and process, voltage, temperature (PVT) information. The voltage driver adjusts the control signal in response to the overdrive control signal to generate an overdriven control signal and outputs the overdriven control signal to the sense amplifier.

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Seoul, South Korea

Byongmo Moon