Samsung Electronics Co., Ltd.

Byong Gwon Song

Joo Young Kim

Jiyoung Jung

Jeong Il Park

Seung Nam Cha

Jae Eun Jang

Jaewon Jang

Do Hwan Kim

Youngjun Yun

Bon Won Koo

Myung-Sup Jung

Ajeong Choi

Ji Youl Lee

Byung Wook Yoo

Dae Joon Kang

A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

Thin film transistor and method of manufacturing the same and thin film transistor panel and electronic device

Disclosed are a thin film transistor including a source electrode and a drain electrode facing each other, a channel region between the source electrode and the drain electrode, and a gate electrode overlapped with the channel region, wherein the channel region includes a plurality of semiconductor stripes extending in a direction from the source electrode to the drain electrode, a method of manufacturing the same, a thin film transistor array panel, and an electronic device.

Thin film transistor and method of manufacturing the same and thin film transistor array panel and electronic device

A method of manufacturing a thin film transistor includes forming a gate electrode, forming a gate insulating layer on the gate electrode, forming an organic semiconductor layer on the gate insulating layer, forming a solvent selective photosensitive layer on the organic semiconductor layer, forming an organic semiconductor pattern and a solvent selective photosensitive pattern by simultaneously patterning the organic semiconductor layer and the solvent selective photosensitive layer, respectively, and forming a source electrode and a drain electrode on the organic semiconductor pattern and the solvent selective photosensitive pattern, the source electrode and the drain electrode being electrically connected to the organic semiconductor pattern.

Method of manufacturing thin film transistor, thin film transistor manufactured by the method, and electronic device comprising the thin film transistor

According to example embodiments, an organic passivation layer composition includes a cross-linking agent and an oligomer or a polymer including structural units represented by the following Chemical Formulae 1 and 2:  In Chemical Formulae 1 and 2, each substituent is defined in the detailed description.

Organic passivation layer composition, transistor and/or electronic device including organic passivation layer fabricated therefrom

Disclosed herein is a composition for forming an inorganic pattern, comprising an inorganic precursor, at least one stabilizer selected from &#x3b2;-diketone and &#x3b2;-ketoester, and a solvent. Use of the composition enables efficient and inexpensive formation of an inorganic micropattern.

Composition for forming inorganic pattern and method for forming inorganic pattern using the same

A method of manufacturing zinc oxide nanowires. A metal seed layer is formed on a substrate. The metal seed layer is thermally oxidized to form metal oxide crystals. Zinc oxide nanowires are grown on the metal oxide crystals serving as seeds for growth. The zinc oxide nanowires are aligned in one direction with respect to the surface of the substrate.

Method of manufacturing zinc oxide nanowires

A thin film transistor includes nanowires. More specifically, the thin film transistor includes nanowires aligned between and extending to opposite facing lateral surfaces of source/drain electrodes on a substrate. The nanowires extend in a direction parallel to a major surface defining the substrate to form a semiconductor channel layer. Also disclosed herein is a method for fabricating the thin film transistor.

Growing community of inventors

Seoul, South Korea

Byong Gwon Song