Samsung Electronics Co., Ltd.

Center for University-Industry Corporation

Byeung-leul Lee

Sang-Woo Lee

Jong-pal Kim

Joon-hyock Choi

Yong-chul Cho

Kyu-dong Jung

Sang-Il Kim

Hee-moon Jeong

Jun-o Kim

Seog-Soon Baek

Won-youl Choi

Taek-ryong Chung

Provided are a contact-force sensor package and a method of fabricating the same. The contact-force sensor package includes an elastic layer comprising a side that contacts a source of a contact-force; and a substrate layer adhered to the opposing side of the elastic layer from the side that contacts the source of the contact-force and comprising a cantilever beam separated from the elastic layer and deformed due to the contact-force, a pillar extending from a free end portion of the cantilever beam to the elastic layer and transferring the contact-force from the elastic layer to the cantilever beam, and a deformation sensing element for generating an electrical signal that is proportional to a degree of deformation of the cantilever beam.

Contact-force sensor package and method of fabricating the same

Provided are a print head error checking apparatus and method in which the residual oscillation of a piezoelectric element corresponding to each nozzle of a print head is sensed, the sensed residual oscillation of each piezoelectric element and a predetermined residual oscillation of the piezoelectric element are compared to each other, and whether a print head normally operates is checked in consideration of the results of the comparisons.

Print head error checking apparatus and method

A small structure which uses bonding wires to prevent disturbance and provide support and a method of fabricating the same are provided. The small structure includes a floating body having a plurality of first contact pads, a base having a plurality of second contact pads, and a plurality of bonding wires electrically connecting the first and second contact pads and elastically supporting the floating body. The method of fabricating the small structure includes preparing a base, forming a sacrificial layer on the base, disposing a floating body on the sacrificial layer, connecting the base and the floating body with bonding wires, and removing the sacrificial layer. Thereby, fabrication costs of the small structure are reduced.

Small structure and method for fabricating the same

A vertical offset structure and a method for fabricating the same. The vertical offset structure includes a substrate; a fixed electrode fixing portion formed on the substrate; a fixed electrode moving portion formed at a position away from an upper portion of the substrate by a predetermined distance; a spring portion for connecting the fixed electrode fixing portion and the fixed electrode moving portion to each other so that the fixed electrode moving portion moves into a direction substantially perpendicular to a plate surface of the substrate; a movable electrode located away from the upper portion of the substrate by a predetermined distance to have a predetermined interval horizontal to the fixed electrode moving portion; and a cap wafer bonded to a predetermined area of one of the fixed electrode moving portion and the movable electrode.

Vertical offset structure and method for fabricating the same

A method for fabricating a vertical offset structure that forms a complete vertical offset on a wafer includes a first trench forming step of forming first trenches on a wafer; a first etching step of performing a first patterning for determining etching positions of second and third trenches by depositing a first thin film on the wafer, performing a second patterning for temporarily protecting the etching position of the third trench by depositing a second thin film on the first thin film and the wafer, and then forming the second trenches by etching the wafer; a second etching step of forming a protection layer on side surfaces of the second trenches and then vertically extending the second trenches by etching the wafer; a third etching step of removing the second thin film and then forming the third trench by etching a position from which the second thin film is removed; and a fourth etching step of horizontally extending the second trenches vertically extended at the second etching step and the third trench by etching the wafer.

Method for fabricating vertical offset structure

Apparatus and a method for driving and detecting a motion of MEMS structure using single electrode. Apparatus includes a driving signal generation part driving MEMS structure; a motion detection part detecting motion of MEMS structure and outputting a motion current signal; an amplification part amplifying motion current signal and outputting a motion voltage signal; a gain adjustment part amplifying driving signal and outputting an amplified driving signal; a differential circuit part adding and subtracting with respect to signals output from the amplifying part and the gain adjustment part and outputting a motion signal without the driving signal; and a motion signal detection part selecting and outputting a motion signal of a predetermined frequency from the motion signal output from the differential circuit part. The variable capacitor is configured by a movable electrode plate integrally formed with MEMS structure and a fixed electrode plate disposed opposite to the movable electrode plate.

Apparatus and method for driving MEMS structure and detecting motion of the driven MEMS structure using a single electrode

A rotation-type decoupled MEMS gyroscope including a drive body movable about the X-axis, a sensing body movable about the Z-axis, a medium body moving together with the drive body about the X-axis and the sensing body about the Z-axis. The drive body is fixed on a substrate by a first torsion spring torsion-deformed about the X-axis, and the medium body is connected to the drive body by a first bending spring bending-deformed about the Z-axis. The sensing body is connected to the medium body by a second torsion spring torsion-deformed about the X-axis and fixed to the substrate by a second bending spring bending-deformed about the Z-axis. If angular velocity is applied relative to the Y-axis while the drive body vibrates in a certain range about the X-axis by a driving electrode, the sensing body rotates about the Z-axis by the Coriolis force and a sensing electrode senses the rotation.

Rotation-type decoupled MEMS gyroscope

Provided are a structure for detecting a vertical displacement and its manufacturing method. The structure for detecting a vertical displacement includes a body, an inertial mass floated over the body, a plurality of support beams extending from the inertial mass so as to suspend the inertial mass over the body, movable electrodes integrally formed with the inertial mass, and fixed electrodes floated over the body, each being positioned between the neighboring movable electrodes, wherein a vertical length of the movable electrode is different from a vertical length of the fixed electrode. Therefore, the structure and the electrodes can be simultaneously manufactured, thereby making the fabrication process simple. Also, it is possible to manufacture a three-axis accelerometer and a three-axis gyroscope on a single wafer by the same process, to be integrated as a six-axis inertial sensor.

Micro structure for vertical displacement detection and fabricating method thereof

A method of reducing notching during reactive ion etching (RIE) is provided. The method is useful when RIE is performed to pass through a silicon layer on a multi-layered structure on which the silicon layer, an insulating layer and a silicon substrate are sequentially deposited. The method includes the steps of: forming an insulating layer on a silicon substrate; forming trenches on the insulating layer to expose the silicon substrate; forming a silicon layer on the insulating layer to fill the trenches; and patterning the silicon layer to form first etch regions, which pass through the silicon layer, to include the trenches. According to the method, it is possible to remarkably reduce notching without depositing a metal layer, when a multi-layered structure including a silicon layer which is etched to be passed through during RIE is fabricated.

Growing community of inventors

Yongin-si, South Korea

Byeung-leul Lee