Samsung Electronics Co., Ltd.

Korea University Industrial Academic Collaboration Foundation

Byeoung-ju Ha

In-sang Song

Yun-kwon Park

Duck-hwan Kim

Seog-woo Hong

Il-Jong Song

Jun-sik Hwang

Hae-seok Park

Jong-seok Kim

Hyung Ki Choi

Joo-ho Lee

Kuang-woo Nam

Seok-chul Yun

Byeong-kwon Ju

Dong-ha Shim

Jae-Sung Rieh

Jea-shik Shin

Young-Min Park

Jin-Woo Lee

Young-ki Hong

Chul-soo Kim

Jong-Seok Kim

Kyung-Il Cho

Kuang-Woo Nam

Jong-beom Kim

Il-jong Song

Chang-seung Lee

Sung-woo Hwang

Hee-Tae Kim

Sang-Chul Sul

Tae-gyun Kim

Young-ho Cho

Hye-jung Cho

Sang-Won Yun

Yong-Kyu Kim

Hao-seok Park

Yun-Kwon Park

A resonator fabrication method is provided. A method includes providing a plurality of electrode patterns disposed apart from each other on a substrate using a nano-imprint technique; and forming an extended electrode pattern connected to a plurality of electrode patterns, and forming a nano structure laid across an extended electrode patterns. Therefore, a nano-electromechanical system (NEMS) resonator is easily fabricated at a nanometer level.

Resonator and fabrication method thereof

A method for fabricating subminiature, high-performance monolithic duplexer is disclosed. The method comprises depositing and patterning a lower electrode on an upper surface of an insulation layer on a substrate, so as to expose a first part of the insulation layer; depositing a piezoelectric layer on an upper surface of the exposed insulation layer and the lower electrode; depositing a metal on the upper part of the piezoelectric layer and patterning the metal to form a resonance part and a trimming inductor, wherein the lower electrode electrically couples the resonance part and the trimming inductor; fabricating air gap type FBARs (film bulk acoustic resonances) by forming a cavity by etching the substrate under the resonance part; and bonding a packaging substrate on the substrate, the packaging substrate having a phase shifting part which substantially prevents inflow of signal between the air gap type FBARs.

Method of manufacturing a monolithic duplexer

Provided is a method for fabricating a duplexer. The method includes fabricating an embedded PCB having an isolation part built therein and forming pads on certain areas of an upper side of the embedded PCB to connect with an external terminal. Further, a first filter and a second filter are separately fabricated, each having at least one film bulk acoustic resonator which is fabricated by depositing a lower electrode, a piezoelectric layer, and an upper electrode in this respective order. Thereafter, the first and second filters are bonded onto the pads formed on the embedded PCB. The entire surface of the embedded PCD is packaged at a predetermined distance from the first and second filters.

Method of fabricating a duplexer using an embedded PCB

A tunable filter is provided which includes a filter unit comprising a pair of microstrips which are disposed facing each other, a capacitor unit connected to one side of the filter unit, and an adjustment unit for regulating the length of each of the pair of microstrips to adjust inductance of the filter unit, the adjustment unit being connected to the opposite side of the filter unit. The length of the microstrips may thereby be regulated in order to vary the frequency band.

Tunable resonator and tunable filter

A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.

Resonant structure comprising wire and resonant tunneling transistor

A high-integrated duplexer and a fabrication method thereof. The duplexer has a first filter to pass a signal of a transmitted frequency band, a second filter to pass a signal of a received frequency band, an embedded PCB having the first and second filters bonded on a certain area of a surface of an upper side in a predetermined distance from each other, and an isolation part to prevent a signal interference between the first and second filters, and a packaging substrate to package the entire upper side of the embedded PCB so that the packaging substrate is located above and separated from the first and second filters by a predetermined distance. The fabricated high-integrated duplexer has a small size and high performance.

Duplexer using an embedded PCB and method of fabricating the same

A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.

Method for manufacturing a film bulk acoustic resonator

A subminiature, high-performance monolithic duplexer is disclosed. The monolithic duplexer includes a substrate, a transmitting-end filter formed in a first area on an upper surface of the substrate, a receiving-end filter formed in a second area on the upper surface of the substrate, a packaging substrate, bonded on an area on the upper surface of the substrate, for packaging the transmitting-end filter and the receiving-end filter in a sealed state, and a phase shifter, formed on one surface of the packaging substrate and connected to the transmitting-end filter and the receiving-end filter, respectively, for intercepting a signal inflow between the transmitting-end filter and the receiving-end filter.

Monolithic duplexer

A resonator having a membrane formed of a piezoelectric layer sandwiched between first and second electrode is suspended above a cavity formed from the back surface of the support structure. In one embodiment, the cavity walls are substantially perpendicular to the back surface. In another embodiment, the first electrode is formed in the cavity such that it is electrically connected to an electrode on the back surface of the support structure. In yet another embodiment, the cavity is formed via an etch through via holes in the back surface of the support structure, which leads to greater flexibility in designing a method of manufacture while reducing the need for alignment relative to other designs.

Bulk acoustic wave resonator, filter and duplexer and methods of making same

A film bulk acoustic resonator (FBAR) including a substrate having an etched air gap therethrough; a resonance part having a first electrode, a piezoelectric film and a second electrode which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part.

Film bulk acoustic resonator and a method for manufacturing the same

An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

Inductor integrated chip

A coupled resonator filter and a method of fabricating the coupled resonator filter are provided. The method includes: sequentially stacking a first electrode, a first piezoelectric layer, a second electrode, an insulating layer, a third electrode, a second piezoelectric layer, and a fourth electrode on a surface of a substrate; sequentially patterning the first electrode, the first piezoelectric layer, the second electrode, the insulating layer, the third electrode, the second piezoelectric layer, and the fourth electrode to expose areas of the first, second, and third electrodes; forming a plurality of connection electrodes respectively connected to the exposed areas of the first, second, and third electrodes and an area of the fourth electrode; and etching an area of the substrate underneath the first electrode to form an air gap.

Coupled resonator filter and fabrication method thereof

A filter formed of film bulk acoustic resonators has a topology that enables a trimming inductor to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor is connected between the common electrode and ground potential. A third shunt resonator is connected between the series-connected resonators and ground potential.

Monolithic RF filter

A duplexer which prevents effects between transmitter and receiver filters. The duplexer include a substrate, a transmitter filter fabricated in a predetermined first area on a surface of the substrate, a receiver filter fabricated in a predetermined second area on the surface of the substrate and an air cavity fabricated in an area between the predetermined first and second areas by etching the substrate to isolate the transmitter and receiver filters from each other. The air cavity is fabricated in the substrate perpendicular to directions along which the transmitter and receiver filters are disposed. Accordingly, physical effects among elements can be effectively intercepted.

Growing community of inventors

Seongnam-si, South Korea

Byeoung-ju Ha