Samsung Electronics Co., Ltd.

Byeongnoh Kim

Dohan Kim

Insu Choi

Changmin Lee

Namhyung Kim

Chinam Kim

Kyeongjin Cho

Taekyeong Ko

Bobae Kim

A memory device includes; a memory cell array, and a command/address decoder including a buffer memory, a first decoding logic circuit configured to decrypt command/address information, and a second decoding logic circuit configured to decrypt an address table. The command/address decoder is configured to decrypt a first command received from a memory controller through the first decoding logic circuit to obtain a table synchronization command, decrypt data received from the memory controller after a predefined latency from receipt of the first command through the second decoding logic circuit to obtain an address table, store the address table in the buffer memory, decrypt a second command received from the memory controller through the first decoding logic circuit to obtain a table-based command and index information associated with the address table, and execute the table-based command with respect to an address corresponding to the index information.

Memory device including address table and operating method for memory controller

Growing community of inventors

SUWON-SI, South Korea

Byeongnoh Kim