Samsung Electronics Co., Ltd.

Byeongmoo Kang

Yoonyoung Choi

Sejin Park

Jinwoo Bae

Sungsoo Yim

Seongmo Koo

A semiconductor device includes a transistor on a semiconductor substrate including a first area and a second area, and having a gate structure and an impurity area, a first interlayer insulating film covering the transistor, and having a contact plug electrically connected to the impurity area, a capacitor including a lower electrode on the first interlayer insulating film in the second area and electrically connected to the contact plug, a dielectric film coating a surface of the lower electrode, and an upper electrode on the dielectric film, and a support layer in contact with an upper side surface of the lower electrode to support the lower electrode, and extending to the first area, in which the support layer has a step between the first area and the second area.

Growing community of inventors

Busan, South Korea

Byeongmoo Kang