Samsung Electronics Co., Ltd.

Byeong-Soo Kim

Kyoung-Min Lee

Soo-Hyun Yoon

Dong-Won Chun

Han-ku Cho

Tae-young Kim

Kyung-Tae Kim

Sung-Hee Lee

Sang-Gyun Woo

Gi-Sung Yeo

Han-Ku Cho

Kyoung-Sub Shin

Min-Hyouk Bu

Joon-Soo Park

Hong Seok Cho

Hyung-yong Kim

Jun-ho Yoon

Joung-Min Oh

Dong-Bin Kim

Se-Kap Park

Charger for cleaner

Intake for cleaner

Cleaner

Pipe for cleaner

Remote control

Robot cleaner

A method of forming an active region structure includes preparing a semiconductor substrate including a cell array region and a peripheral circuit region, forming preliminary cell active regions in the cell array region of the semiconductor substrate, and forming cell active regions in the preliminary cell active regions and at least one peripheral active region in the peripheral circuit region of the semiconductor substrate, such that the preliminary cell active regions, the cell active regions, and the at least one peripheral active region are integrally formed with the semiconductor substrate and protrude from the semiconductor substrate.

Method of forming active region structure

There are provided methods of performing a photolithography process for forming asymmetric semiconductor patterns and methods of forming a semiconductor device using the same. These methods provide a way of forming asymmetric semiconductor patterns on a photoresist layer through two exposure processes. To this end, a semiconductor substrate is prepared. A planarized insulating interlayer and a photoresist layer are sequentially formed on the overall surface of the semiconductor substrate. A first semiconductor pattern of a photolithography mask is transferred to the photoresist layer, thereby forming a photoresist pattern on the photoresist layer. A second semiconductor pattern of a second photolithography mask is continuously transferred to the photoresist layer, thereby forming a second photoresist pattern on the photoresist layer. An etching process is performed on the planarized insulating interlayer to expose the semiconductor substrate, using the first photoresist pattern and the second photoresist pattern as etch masks.

Methods of performing a photolithography process for forming asymmetric patterns and methods of forming a semiconductor device using the same

A mask corrects for an optical proximity effect (OPE). A dummy pattern having a phase-edge effect is formed on a mask substrate. The phase-edge effect reduces the intensity of light at the boundary of two transmitting regions from through transmitted light has a phase difference. A pattern can then be formed in a photolithographic process using the phase-edge effect. A difference between 'isolated' and 'dense' patterns formed on a wafer can be reduced by forming a dummy pattern in an isolated pattern region of the mask and making the diffraction pattern of the isolated pattern the same as that of the dense pattern, thereby improving the total focus margin. Because the intensity of light is reduced at the boundary between a first region in which the phase of the transmitted light is 0&#xb0; and a second region in which the phase of the transmitted light is 180&#xb0;, for example, a photoresist layer is not photosensitized.

Method of manufacturing mask for correcting optical proximity effect

A mask corrects for an optical proximity effect (OPE). A dummy pattern having a phase-edge effect is formed on a mask substrate. The phase-edge effect reduces the intensity of light boundary of two transmitting regions from through transmitted light has a phase difference. A pattern can then be formed in a photolithographic process using the phase-edge effect. A difference between 'isolated' and 'dense' patterns formed on a wafer can be reduced by forming a dummy pattern in a isolated pattern region of the mask and making the diffraction pattern of the isolated pattern the same as that of the dense pattern, thereby improving the total focus margin. Because the intensity of light is reduced at the boundary between a first region in which the phase of the transmitted light is 0&#xb0; and a second region in which the phase of the transmitted light is 180&#xb0;, for example, a photoresist layer is not photosensitized.

Mask for correcting optical proximity effect

A wafer sawing apparatus comprises an electrically conductive chuck table surrounding a suction plate and tactile sensing lines formed on the upper surface of the suction plate. At least one end of each tactile sensing line is electrically connected to the table body. A controller controls the chuck table and a scribing blade. The controller is electrically connected to both elements. The controller comprises a tactile sensing unit connected to the table body for sensing contact of the scribing blade with the tactile sensing lines or the table body and an equipment stop unit for stopping the scribing blade. The controller further comprises a zero point adjusting unit for receiving a contact signal from the tactile sensing unit and for adjusting a zero point of the scribing blade, and a switching unit connecting the tactile sensing unit to the zero point adjusting unit or the equipment stop unit.

Wafer sawing apparatus

A recording/reproducing apparatus is provded for dispersedly recording one-frame data on a plurality of tracks. The recording/reproducing apparatus includes a trans-codec for format converting received digital data into sync blocks each of which has a predetermined size and converting the sync blocks into a format possessed by the received digital data, a frame error corrector for interleaving data of the sync blocks allocated on different tracks in each frame using the sync blocks supplied from the trans-codec and performing frame error correction coding with respect to the interleaved data, and for error correction decoding and deinterleaving the frame error correction coded data, an error correction codec for performing inner code/outer code error correction coding with respect to the frame error correction coded data and performing inner code/outer code error correction decoding with respect to the inner code/outer code error correction coded data, and a recording/reproduction unit for recording the data supplied from the error correction codec on a recording medium and supplying the data recorded on the recording medium to the error correction codec. Accordingly, the present invention performs an additional frame error correction coding in addition to the inner and outer code error correction, to thereby improve a quality of picture during reproduction in a high compression system such as a HD-DVCR and prevent a picture from being broken.

Threefold error correction coding method and apparatus for high definition digital video cassette recorder

Growing community of inventors

Suwon, South Korea

Byeong-Soo Kim