The Industry & Academic Cooperation in Chungnam National University (iac)

Kuk-il Graphene Co., Ltd.

Kuk-ii Graphene Co., Ltd.

Byeong-Ju Park

Soon-Gil Yoon

Yi-Re Han

Disclosed is a high-quality and high-functional graphene-based TFT, including: a gate electrode, a gate insulating layer disposed on the gate electrode; an active layer including a nitrogen-doped graphene layer, on which disposed in a partial region of the gate insulating layer; a first electrode disposed on a region of one side of the active layer; and a second electrode disposed on a region of the other side of the active layer. The present invention allows obtaining the TFT having excellent characteristics by directly growing graphene on a Ti layer, implementing damages with remote plasma, and doping with nitrogen gas to fabricate a graphene active layer.

Graphene-based TFT comprising nitrogen-doped graphene layer as active layer

The present invention relates to a transfer-free method for producing a graphene thin film, which may form a high-quality graphene layer having excellent crystallinity on a substrate without a transfer process, and to a method of fabricating a device using the transfer-free method. More specifically, the present invention relates to a transfer-free method for producing a graphene thin film and a method for fabricating a device using the transfer-free method, the methods including the steps of: (A) forming a titanium buffer layer on a target substrate; and (B) growing a graphene thin film on the titanium buffer layer, wherein process are performed in an oxygen-free atmosphere throughout the steps (A) to (B).

Transfer-free method for producing graphene thin film

The present invention relates to a transfer-free method for forming a graphene layer, in which a high-quality graphene layer having excellent crystallinity can be easily formed over a large area at low temperature by a transfer-free process so that it can be applied directly to a base substrate, which is used in a transparent electrode, a semiconductor device or the like, without requiring a separate transfer process, and to an electrical device comprising a graphene layer formed by the method. More specifically, the transfer-free method for forming a graphene layer comprises the steps of: depositing a Ti layer having a thickness of 3-20 m on a base substrate by sputtering; and growing graphene on the deposited Ti layer by chemical vapor deposition.

Growing community of inventors

Daejeon, South Korea

Byeong-Ju Park