Samsung Electronics Co., Ltd.

Byeong-Ju Kim

Yong-Hoon Son

Kyung-Hyun Kim

Phil-Ouk Nam

Yeon-Sil Sohn

Won-Bong Jung

Jin-I Lee

Kohji Kanamori

Young-Woo Park

Chang-seok Kang

Jae-Duk Lee

Jong-Heun Lim

Jong-won Kim

Kwang-Chul Park

Kwang Chul Park

A vertical memory device includes a substrate, a channel on the substrate, extending in a vertical direction with respect to a top surface of the substrate, and including a protrusion at a lower portion of the channel, the protrusion extending in a parallel direction with respect to the top surface of the substrate, a semiconductor pattern connecting the protrusion and the substrate, and gate lines stacked and spaced apart from each other in the vertical direction, the gate lines on the protrusion and the semiconductor pattern and surrounding the channel.

Vertical memory devices

A nonvolatile memory device includes a conductive line disposed on a substrate and vertically extended from the substrate, a first channel layer disposed on the substrate and vertically extended from the substrate, wherein the first channel layer is spaced apart from the conductive line, a second channel layer vertically extended from the substrate, wherein the second channel layer is disposed between the first channel layer and the conductive line, a first gate electrode disposed between the conductive line and the second channel layer, wherein the first gate electrode includes a first portion having a first thickness and a second portion having a second thickness that is different from the first thickness, and a second gate electrode disposed between the first channel layer and the second channel layer, wherein the second gate electrode has the second thickness.

Nonvolatile memory device and a method for fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Byeong-Ju Kim