Samsung Electronics Co., Ltd.

Byeong-jae Ahn

Sung-Man Kim

Bong-Jun Lee

Beom-jun Kim

Kyung-Wook Kim

Hyang-Shik Kong

Young-Goo Song

Hyeong-Jun Park

Yu-Jin Kim

Hyun-Ho Kang

Dong-Hyeon Ki

Shin-Tack Kang

Yeon-Kyu Moon

Yun-Hee Kwak

Jeong-il Kim

A thin film transistor ('TFT') display plate, capable of reducing a load on a gate line, increasing an aperture ratio and preventing light leakage, includes an insulating substrate, a gate line formed on the insulating substrate, a storage electrode line spaced apart from the gate line and formed on an insulating substrate, a data line insulated from the gate line and the storage electrode line and intersecting the gate line, a pixel electrode formed for each pixel defined by the gate line and the data line, a thin film transistor ('TFT') connected to the gate line and the data line to apply a voltage to the pixel electrode, and a storage electrode formed on the same layer as the data line and connected to the storage electrode line to form one terminal of a storage capacitor along with the pixel electrode as the other terminal of the storage capacitor.

Thin film transistor display plate and liquid crystal display having the same

A shift register includes a plurality of stages to output a plurality of output signals, in sequence. Each of the stages includes a driving part and a discharging part. The driving part outputs an output signal of a present stage based on one of a start signal and an output signal of a previous stage, and a clock signal. The discharging part discharges the output signal of the present stage. The discharging part includes a discharge transistor and an auxiliary transistor. The discharge transistor has a gate electrode receiving an output signal of a next stage. The auxiliary transistor has a gate electrode receiving the output signal of the next stage. The auxiliary transistor is electrically connected in series to the discharge transistor. Therefore, the chance of a malfunction is decreased, and image display quality of the display device is improved.

Shift register and display device having the same

The present invention relates to a thin film transistor (TFT) substrate and method of making such a TFT substrate. The structure of the TFT substrate helps prevent damage to signal lines in non-display areas.

Thin film transistor substrate and manufacturing method thereof

A liquid crystal display ('LCD') includes a data interconnection line including a data line, a source electrode as a branch of the data line, and a drain electrode formed spaced apart from the source electrode, a semiconductor layer formed under the data interconnection line and connected to the source electrode and the drain electrode below the source electrode and the drain electrode and forming a channel region, and a gate interconnection line formed under the semiconductor layer and including a gate line intersecting the data line, the gate line extending in a first direction and the data line extending in a second direction, and a gate electrode branched from the gate line, wherein the gate line includes a first recess having a first width and a first length.

Liquid crystal display

A thin film array panel is provided, which includes: a gate line formed on a substrate; a first insulating layer formed on the gate line; a semiconductor layer formed on the gate insulating layer; a data line formed on the gate insulating layer and intersecting the gate line; a drain electrode formed at least on the semiconductor layer; a conductor arranged in parallel to the data line; a second insulating layer formed on the data line, the drain electrode, and the conductor and having a first contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the second insulating layer, connected to the drain electrode through the first contact hole, fully covering the data line.

Thin film transistor array panel

Growing community of inventors

Seoul, South Korea

Byeong-jae Ahn