Samsung Display Co., Ltd.

Byeong Hoon Cho

Seong Min Wang

Mu Gyeom Kim

Ki-Hun Jeong

Kun-Wook Han

Dae Cheol Kim

Woong Kwon Kim

Jung Hak Nam

Jung Suk Bang

Hong-Kee Chin

Kyung-Sook Jeon

Yun Jong Yeo

Sang Youn Han

Suk Won Jung

Sung Hoon Yang

Jung-Suk Bang

Seung Mi Seo

Sung Ryul Kim

Jong Hyuk Kang

Sang Gab Kim

Jung Gun Nam

Sung Jin Mun

An organic light emitting diode display device, including a flexible substrate; pixels on the flexible substrate, the pixels including an organic emission layer; a pixel definition layer between the pixels, the pixel definition layer including openings; an encapsulation layer covering the pixels; and a conductive light shielding member on the encapsulation layer, the conductive light shielding member not overlapped with the pixels, and overlapped with the pixel definition layer.

Organic light emitting diode display device

An inkjet printing apparatus comprises an inkjet head disposed above a stage and including nozzles through which ink including bipolar elements is discharged, the bipolar elements each having regions partially doped with different polarities. At least part of the nozzles is deflected from a direction in case that the nozzles are in a deflected state.

Inkjet printing apparatus

A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

Method for manufacturing a thin film transistor array panel

A panel for a display device is provided. The panel includes a first substrate, a touch sensing circuit formed on the first substrate, the touch sensing circuit including at least one sensing thin film transistor and a connection wire, and a shielding electrode formed covering at least a portion of the sensing thin film transistor and the connection wire.

Display having touch sensing function

An organic light emitting diode display including a pixel that includes a light-emitting device and a first thin film transistor connected to the light-emitting device; and a sensor that includes a light sensing element, wherein the light sensing element includes a gate electrode; an active layer on the gate electrode; a filter layer on the active layer; and source and drain electrodes on the active layer, the source and drain electrodes being connected to the active layer, the light sensing element and the first thin film transistor are formed on a same substrate, and one of the gate electrode and the active layer of the light sensing element and a gate electrode of the first thin film transistor are aligned on a same layer.

Organic light emitting diode display including sensors

An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.

IR sensing transistor and manufacturing method of display device including the same

An optical sensor preventing damage to a semiconductor layer, and preventing a disconnection and a short circuit of a source electrode and a drain electrode, and a manufacturing method of the optical sensor is provided. The optical sensor includes: a substrate; an infrared ray sensing thin film transistor including a first semiconductor layer disposed on the substrate; a visible ray sensing thin film transistor including a second semiconductor layer disposed on the substrate; a switching thin film transistor including a third semiconductor layer disposed on the substrate; and a semiconductor passivation layer enclosing an upper surface and a side surface of an end portion of at least one of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer.

Optical sensor

Growing community of inventors

Seoul, South Korea

Byeong Hoon Cho