Samsung Display Co., Ltd.

Byeong Beom Kim

Hoi Kwan Lee

Min Ki Kim

Yu Ri Kim

Hyung Jun Kim

Sang Won Shin

Joon Yong Park

Seung Ho Kim

Chang Oh Jeong

Woo Suk Seo

Heon Sik Ha

Hong Long Ning

Min Gyu Kim

Jin Ho Hwang

A glass article includes a flat portion and a side portion extending from the flat portion and bent in a thickness direction of the glass article, a base disposed on the flat portion and the side portion; and a Beilby layer disposed on the flat portion and not disposed on at least a part of the side portion.

Glass article, display device including the glass article, and method of manufacturing the glass article

In a method of fabricating a cover window, the method includes: forming, on a glass article having a flat upper surface, a mask layer including water glass and a recess portion having a partially recessed upper surface; and etching the mask layer and the glass article to form a cover window having a partially recessed upper surface.

Method of fabricating cover window, cover window and display device including the same

A display device includes a display panel including panel pads adjacent to the side surface of a display panel; connection pads disposed on the side surface of the display panel and connected to the panel pads; and a circuit board disposed on the side surface of the display panel and including lead signal lines directly bonded to the connection pads, wherein the connection pads include a first connection pad, a second connection pad disposed on the first connection pad, and a third connection pad disposed on the second connection pad, and the first connection pad is in contact with corresponding one of the panel pads, and the third connection pad is directly bonded to corresponding one of the lead signal lines.

Display device

A transistor panel may include a substrate, a transistor, a first inorganic buffer layer, and an inorganic fluorine-containing buffer layer. The transistor may overlap the substrate and may include a semiconductor layer. The first inorganic buffer layer may be disposed between the substrate and the semiconductor layer. The inorganic fluorine-containing buffer layer may be disposed between the first inorganic buffer layer and the semiconductor layer and may contain fluorine in a range of 0.5 at % to 2 at %.

Thin film transistor panel, display device, and method of manufacturing the thin film transistor panel

Exemplary embodiments of the present invention relate to a panel and a display device including the same, the panel including a substrate, a signal line arranged on the substrate, the signal line configured to transmit a driving signal, an insulating layer arranged on the signal line, and a pixel electrode and a contact assistant arranged on the insulating layer. The contact assistant is electrically connected to a portion of the signal line, the contact assistant includes indium zinc oxide doped with a metal oxide not including indium or zinc, and the metal oxide has a smaller Gibbs free energy than zinc oxide.

Thin film transistor array panel and display device including the same

Growing community of inventors

Asan-si, South Korea

Byeong Beom Kim