Motorola Corporation

Burt Wayne Fowler

Sebastian Csutak

John J Stankus

A method of forming a resonant cavity device useful for optoelectronic applications is disclosed. A monocrystalline top semiconductor substrate is wafer bonded to a mirror formed over or within a bottom semiconductor substrate. A top mirror is formed over or within the top semiconductor substrate.

Method for forming a semiconductor device for detecting light

A method for forming a buried optical mirror in an integrated circuit (IC) begins by forming an opening (18) within a substrate (12). The opening (18) is then filled with a plurality of dielectric layers (20-26) that have different indexes of refraction whereby a Bragg reflector can be formed. A chemical mechanical polishing (CMP) process is then used to planarize the layers (20-26) such that these layers (20-26) only reside within the opening (18) whereby a mirror is formed. Lateral selective epitaxial growth, polysilicon deposition and recrystallization, or wafer bonding is then used to form a single crystalline or near single crystalline semiconductive material (32b) over a top of the substrate (12) and the reflecting mirror. Photodevice(s) are then formed over the mirror in the region (28) of material (32b) whereby reflecting mirror (20-26) will improve the quantum efficiency and speed of the photodevice(s).

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Mountain City, TX, United States of America

Burt Wayne Fowler