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Oxford University Innovation Limited

Institut Fuer Physikalische Hochtechnologie E.v.

Burkard Hillebrands

Roland Mattheis

Arno Ehresmann

Robert Leon Stamps

Tsz Cheong Fung

Wolfgang-Dietrich Engel

John Francis Gregg

Juergen Fassbender

Tim Mewes

Apparatus for generating spin waves comprising a body () of magnetic material and an elastic wave generator (), wherein the body () has a surface () and the elastic wave generator () is arranged to transmit elastic waves so that they propagate through the body () towards the surface () and are reflected at the surface to form a standing elastic wave in the body (), thereby generating spin waves.

Acoustic excitation and detection of spin waves

The invention relates to a Wheatstone bridge containing bridge elements that are connected in a conventional manner and consisting of a spin-valve system, in addition to a method for producing the same. The aim of the invention is to produce a Wheatstone bridge, in which respective half-bridges lying adjacent to one another have a respective non-parallel bias magnetisation direction. To achieve this, the respective bridge elements that are not adjacent (or) are provided with a doping of implantable ions in quantities of between 1.10and 5.10atoms/cm2 beneath the pinned ferromagnetic layer of a GMR- or TMR-spin-valve layer system. During the bombardment of selected bridge areas () or surface areas, which are not provided with a covering (), with a low dose of low-energy ions, whose strengths are sufficiently great to enable the is ions to penetrate the pinned ferromagnetic layer, all surface areas or bridge elements () are exposed to a homogeneous, targeted magnetic field of sufficient strength.

Wheatstone bridge containing bridge elements, consisting of a spin-valve system and a method for producing the same

A digital magnetic memory cell device for read and/or write operations having a first and a second magnetic layer, the magnetization of which is oriented parallel or antiparallel for the storage of digital information. An intermediate layer is disposed between the first and second magnetic layers. A pair of intersecting conductors are disposed to switch the magnetization of at least one of the two magnetic layers in a memory cell defined by the intersection thereof when a read or a write current is applied thereto. The conductors intersect at an angle &bgr; so that current pulses having a pulse duration <10 ns make it possible to switch the magnetization of a cell fully and securely from a parallel to an antiparallel orientation and vice versa.

Magnetoresistive random access memory and method for reading/writing digital information to such a memory

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Kaiserslautern, Germany

Burkard Hillebrands