United Microelectronics Corp.

Buo-Chin Hsu

Chien-Li Kuo

Tung-Hsing Lee

Chih-Ming Su

Yun-San Huang

The present invention provides a method for fabricating an embedded static random access memory, including providing a semiconductor substrate; defining a logic area and a memory cell area on the semiconductor substrate and defining at least a first conductive device area and at least a second conductive device area in the logic area and the memory cell area respectively; forming a patterned mask on the memory cell area and on the second conductive device area in the logic area and exposing the first conductive device area in the logic area; performing a first conductive ion implantation process on the exposed first conductive device area in the logic area; and removing the patterned mask.

Growing community of inventors

Taipei County, Taiwan

Buo-Chin Hsu