Taiwan Semiconductor Manufacturing Comp. Ltd.

Ramgoss Inc.

Lumenz, Inc.

Other

Purdue Research Foundation

North Carolina State University

Bunmi T Adekore

James Fiorenza

Zhiyuan Cheng

Peide Ye

Yi Xuan

Yanqing Wu

Robert F Davis

Jonathan M Pierce

George B Kenney

In an embodiment, a system for analyzing excreta, wherein the system is configured to collect and analyze at least a portion of an excreta, wherein at least a portion of the system is configured to be embedded in an excreta disposal unit, and wherein the system comprises at least one electronic device. In a further embodiment, an analysis system for analyzing excreta, comprises a first portion configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and a second portion configured to homogenize the at least a portion of the excreta collected by the first portion. In a further embodiment, an analysis system for analyzing excreta comprises a first portion of configured to be connected to an excreta disposal unit and configured to collect at least a portion of an excreta, and wherein the analysis system is configured to detect analyte from multiple users.

Embedded excreta analysis device and related methods

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device are disclosed. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

INP-based transistor fabrication

Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP.

InP-based transistor fabrication

A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

Vertical field effect transistor on oxide semiconductor substrate

A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an AlOor a ZnO or a Group-III Nitride-based material, and a first structure disposed on a first side of the substrate comprising of AlInGaN-based and/or ZnMgO based semiconducting materials. The first structure further includes an intentional current-conducting sidewall channel or facet whereupon additional semiconductor layers, dielectric layers and electrode layers are disposed and upon which the field effect of the dielectric and electrode layers occurs thus allowing for a high density monolithic integration of a multiplicity of discrete devices on a common substrate thereby enabling a higher power density than in conventional lateral power MOSFET devices.

Rotated channel semiconductor field effect transistor

A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1&#xd7;10cm. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

Growing community of inventors

Medford, MA, United States of America

Bunmi T Adekore