Canon Kabushiki Kaisha

Bunei Hamasaki

Naoki Ayata

Kazuo Takahashi

Masao Kosugi

Mitsuaki Seki

Akiya Nakai

Mitsugu Yamamura

Shinji Utamura

Mitsuya Sato

Ryuichi Sato

Masanori Numata

Yoichi Kuroki

Hiroki Suzukawa

Takahiro Senda

Hajime Igarashi

Kenichi Kawai

In editing of a job parameter in a semiconductor exposure apparatus controlled by the job parameter, which is a collection of parameters, a first parameter set independent of the model of the semiconductor exposure apparatus and a second parameter set dependent upon the model are edited and saved independently. This makes it possible to improve operability of parameter editing and management in the semiconductor exposure apparatus, ease of maintenance thereof and the ability to use job parameters among various models of apparatus.

Parameter editing method and semiconductor exposure system

An alignment apparatus includes a first off-axis alignment optical system having a magnification, and a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, wherein the apparatus is operable in a global alignment mode using the second off-axis alignment optical system. In another aspect, an alignment apparatus which includes a first off-axis alignment optical system having a magnification, a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, and a TTL alignment optical system, wherein the alignment apparatus is operable in a global alignment mode using the second off-axis alignment optical system and is operable in another global alignment mode using the TTL optical alignment system.

Alignment and exposure apparatus and method for manufacture of

A system for controlling operation of a fine pattern printing apparatus. The system including a command storing portion in which a plurality of unit-operation instructing commands capable of instructing execution of corresponding unit operations which are components of the pattern printing operation of the apparatus and at least one sequential operation instructing command including a combination of at least a predetermined portion of the unit-operation instructing commands are stored. A command selecting portion for allowing selection of the commands stored in the command storing portion; a sequence setting portion cooperative with the command selecting portion so as to set, in the command storing portion, a desired sequential operation instructing command formed by a plurality of unit-operation instructing commands each of which is stored in the command storing portion. The sequential operation instructing command set in the storing portion by the sequence setting portion is selectable by the command selecting portion and operation controlling portion cooperative with the command selecting portion so as to control the operation of the apparatus in accordance with such one of the commands stored in the storing portion that is selected by the selection portion.

Control system for a fine pattern printing apparatus

An alignment apparatus includes a first off-axis alignment optical system having a magnification, and a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, wherein the apparatus is operable in a global alignment mode using the second off-axis alignment optical system. In another aspect, an alignment apparatus includes a first off-axis alignment optical system having a magnification, a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, and a TTL alignment optical system, wherein the alignment apparatus is operable in a global alignment mode using the second off-axis alignment optical system and is operable in another global alignment mode using the TTL optical alignment system.

An alignment apparatus including a first off-axis alignment optical system having a magnification, and a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, wherein the apparatus is operable in a global alignment mode using the second off-axis alignment optical system. In another aspect, there is provided an alignment apparatus which includes a first off-axis alignment optical system having a magnification, a second off-axis alignment optical system having a magnification higher than that of the first off-axis alignment optical system, and a TTL alignment optical system, wherein the alignment apparatus is operable in a global alignment mode using the second off-axis alignment optical system and is operable in another global alignment mode using the TTL optical alignment system.

A method of aligning a semiconductor wafer, usable in a step-and-repeat type exposure apparatus for projecting, in a reduced scale, images of a pattern formed on a reticle upon different shot areas on the semiconductor wafer in a predetermined sequence. According to this alignment method, the wafer is moved stepwise before the initiation of step-and-repeat exposures of the shot areas on the wafer and in accordance with a predetermined layout grid concerning the sites of the shot areas on the wafer. While moving the wafer stepwise in this manner, any positional deviation of each of some of the shot areas with respect to the layout grid is measured by use of a reduction projection lens system and, from the results of measurement, a corrected grid is prepared according to which grid the amount of stepwise movement of the wafer to be made for the step-and-repeat exposures thereof is determined. By this, for the exposures, the wafer can be moved stepwise exactly in accordance with the actual layout of the shot areas. Sample shot areas which are the subject of measurement can be selected under predetermined conditions. Additionally, of the values obtained as a result of the measurement, any extraordinary one or ones may be determined on the basis of the variance and then are excluded at the time of calculations made to determine the corrected grid. Thus, the stepwise movement of the wafer for the step-and-repeat exposures thereof can be controlled with higher precision.

Alignment method usable in a step-and-repeat type exposure apparatus for

An alignment method usable in an apparatus for transferring images of a pattern of a mask onto different portions of a semiconductor wafer in a step-and-repeat manner, is disclosed. In this alignment method, positional deviation of at least one portion of the wafer with respect to the mask is measured and, on the basis of this measurement, the mask and the wafer are aligned with each other. After this,step-and-repeat exposure is executed. When the measurement of the positional deviation of the at least one portion of the wafer is unattainable, another portion of the wafer is selected and the deviation measurement is executed in respect to the selected portion. In another aspect of the invention, with regard to a rotational component of the deviation of the wafer, measurement and alignment are repeatedly executed until the rotational component becomes less than a predetermined value. Thereafter, the step-and-repeat exposure is initiated.

Alignment method

An improved alignment method usable in a step-and-repeat type alignment and exposure apparatus for photolighographically transferring images of a pattern of a reticle onto different shot areas on a semiconductor wafer, for manufacture of semiconductor devices. According to this method, the alignment is executed with respect to an X direction, a Y direction and a rotational direction parallel to a plane containing the X and Y directions. With regard to the rotational direction, positional deviation of the wafer as a whole with respect to the reticle is measured and corrected prior to the initiation of the step-and-repeat photoprinting. With regard to the X and Y directions, detection and correction of any deviation are executed for each of the shot areas of the wafer. By this, high-accuracy and high-speed alignment is attainable for all the shot areas of the wafer.

An alignment system in an alignment and exposure apparatus for exposing a wafer to a pattern of a mask, for use in the manufacture of semiconductor devices, the alignment system including an objective lens system for observing alignment marks formed on the mask and the wafer respectively, in order to bring the mask and the wafer into a predetermined alignment relation, prior to the exposure of the wafer. The objective lens system is capable of observing a mark that is formed on a member for holding an exposure optical system in order to allow alignment of the mask relative to the exposure optical system, whereby a reference position of the objective lens system is determined on the basis of the mark formed on the holding member and whereby accurate movement of the objective lens system during movement thereof to a position for observing the alignment marks on the mask and the wafer is assured.

Alignment and exposure apparatus having an objective lens system capable

A probing apparatus for use in examination of a chip formed on a wafer, in co-operation with a sheet-like member having probe needles to be contacted to the chip on the wafer, the probing apparatus being arranged so that the positions of the probe needles of the sheet-like member, when it is held by a holder of the probing apparatus, are detected automatically and, in accordance with the detected positions, the sheet-like member is displaced automatically so as to be aligned with the probing apparatus. According to another aspect of the invention, the position of the wafer when it is at a location under the probe needles is detected automatically and, in accordance with the detected position, the wafer is displaced so as to be aligned with the sheet-like member which has been aligned automatically with the probing apparatus. In one preferred form, a TV camera is provided at a position above the probing station, the TV camera being adapted to view the probe needles of the sheet-like member during positioning of it and to view the wafer when it is at a probing station, during positioning of the wafer.

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Yokohama, Japan

Bunei Hamasaki