Samsung Electronics Co., Ltd.

Bun Joon Kim

Suk Ho Yoon

Hyun Wook Shim

Dong Gyu Shin

Seong Joon Cho

Jung Seung Yang

The nitride semiconductor light emitting device includes a first conductivity-type nitride semiconductor layer, a first superlattice layer disposed on the first conductivity-type nitride semiconductor layer, a pit forming layer disposed on the first superlattice layer and having a plurality of V-shaped pits, a second superlattice layer, an active layer, and a second conductivity-type nitride semiconductor layer disposed on the active layer and filling the V-shaped pits. The second superlattice layer is disposed on the pit forming layer and has windings that have the same shape as a shape of windings generated by the V-shaped pits. The active layer is disposed on the second superlattice layer and has windings that have the same shape as the shape of the windings generated by the V-shaped pits.

Growing community of inventors

Seoul, South Korea

Bun Joon Kim