Wooree Lst Co. Ltd.

Knj Co., Ltd.

Wooree E&l Co., Ltd.

Bun-Hei Koo

Jae-Eung Oh

Jong-Hwa Weon

In-Su Hwang

Ji-Hoon Lee

Nam-Ju Kim

Young-Kyun Noh

Myung-jin Ko

Hyeon-Jun Cho

The present disclosure relates to a part including silicon carbide layer and manufacturing method thereof, and the manufacturing method according to the present disclosure includes preparing a graphite substrate, and laminating a silicon carbide layer on a surface of the graphite substrate, wherein at the laminating the silicon carbide layer, the silicon carbide layer is laminated such that the thickness of the silicon carbide layer is 0.01 to 1 times the thickness of the graphite substrate, thereby improving the durability of the part including silicon carbide layer.

Part including silicon carbide layer and manufacturing method thereof

There is provided a light emitting device using a compound semiconductor, which can improve electrical characteristics and internal quantum efficiency by maximizing the recombination rate of electrons and holes in an active layer. The light emitting device using a compound semiconductor includes a substrate; a compound semiconductor layer formed on the substrate, the compound semiconductor layer comprising an active layer; and a current spreading layer formed on at least one of the top and bottom surfaces of the active layer, the current spreading layer allowing electrons or holes to be uniformly spread into the active layer.

Light emitting device using compound semiconductor

The present invention relates to a light-emitting device using a clad layer consisting of asymmetric units, wherein the clad layer is provided by repeatedly stacking a unit having an asymmetric energy bandgap on upper and lower portions of an active layer, and the inflow of both electrons and holes into the active layer is arbitrarily controlled through the clad layer, so that the internal quantum efficiency can be improved. The light-emitting device using the clad layer consisting of the asymmetric units according to the present invention is characterized in that the clad layer is provided on at least one of the upper and lower portions of the active layer and consists of one or plural units, wherein the unit has a structure in which the first to nunit layers (n is a natural number equal to or greater than three) having different energy bandgaps are sequentially stacked and has an asymmetric energy band diagram.

Light-emitting device using clad layer consisting of asymmetrical units

Growing community of inventors

Seoul, South Korea

Bun-Hei Koo