Samsung Electronics Co., Ltd.

Bumsu Kim

Kihyun Hwang

Jae-young Ahn

Kwangmin Park

Dongchul Yoo

Juyul Lee

Jongsik Chun

Hyun Kyu Park

Hyun Ku Park

A three-dimensional (3D) semiconductor memory device includes an electrode separation pattern, a stack structure, a data storage layer, and a channel structure. The electrode separation pattern is disposed on a substrate. A stack structure is disposed on a sidewall of the electrode separation pattern. The stack structure includes a corrugated sidewall opposite to the sidewall of the electrode separation pattern. The sidewall of the electrode separation pattern is vertical to the substrate. A data storage layer is disposed on the corrugated sidewall. A channel structure is disposed on the charge storage layer.

Three-dimensional semiconductor memory devices and methods of fabricating the same

Growing community of inventors

Gyeonggi-do, South Korea

Bumsu Kim