Lg Innotek Co., Ltd.

Bum Sup Kim

Byung Sook Kim

Jung Eun Han

Dong Geun Shin

Moo Seong Kim

Yeong Deuk Jo

Kyoung Seok Min

Chang Hyun Son

Seo Yong Ha

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a &#x3b2;-type crystal phase and a grain size in a range of about 5 &#x3bc;m to about 100 &#x3bc;m.

Silicon carbide powder and method for manufacturing the same

A semiconductor device comprises a base substrate, a pattern on the base substrate, a buffer layer on the base substrate, and an epitaxial layer on the buffer. The pattern is a self-assembled pattern. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled pattern on the silicon carbide substrate, forming a buffer layer on the silicon carbide substrate, and forming an epitaxial layer on the buffer layer. A semiconductor device comprises a base substrate comprising a pattern groove and an epitaxial layer on the base substrate. A method for growing a semiconductor crystal comprises cleaning a silicon carbide substrate, forming a self-assembled projection on the silicon carbide substrate, forming a pattern groove in the silicon carbide, and forming an epitaxial layer on the silicon carbide.

Semiconductor device and method for growing semiconductor crystal

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Bum Sup Kim