Samsung Electronics Co., Ltd.

Industry-university Cooperation Foundation Sogang University

Industry-university Cooperation Foundation

Sogang University Corporation

Tera Metal Co., Ltd.

Bum Suk Kim

Jong Hoon Park

Jung Chak Ahn

Tae Sub Jung

Yun Ki Lee

Dong Min Keum

Jun Sung Park

Chang Rok Moon

Tae Sung Lee

Dong Kyu Lee

Jung-Saeng Kim

Jung Saeng Kim

Kwang Hee Lee

Tae Chan Kim

Tae Han Kim

Min Jun Jang

Jin Hak Kim

Bo Ra Shin

Min Hee Jang

Yong Kim

Yun Tae Lee

Ki Hong Kim

Hee-Woo Rhee

Sun-Kyu Kim

Jin A Kim

Alexander Getman

Young Hoon Park

Jung Hoon Jung

Hee Woo Rhee

Yong Jei Lee

Bo Mi Kim

Yu Jin Ahn

Sung In Hwang

Sungsu Han

Byong Suk Jeon

Chang Hyun Rho

Hyun Sang Choi

Young Jun Song

Yoon Gi Joung

Jae Yong Choi

Seong-Gyu Min

Soo Cheol Lee

Jeong Hoon Bae

Kyu Yoon Choi

An image sensor, including a substrate having a first surface, and a second surface opposite to the first surface; a first focus pixel; a first merged pixel; a second merged pixel; a first color filter; a second color filter; a third color filter; a grid pattern separating the first to third color filters, but not overlapped by the first to third color filters; a first micro-lens disposed on the first color filter; and a second micro-lens disposed on the second and third color filters, wherein a first-third unit pixel, the first focus pixel, and a second-third unit pixel are continuously arranged along the first direction, and wherein a width of the grid pattern between the first color filter and the second color filter is greater than a width of the grid pattern between the second color filter and the third color filter.

Image sensor

An image sensor includes different first and second focus pixels in a substrate; a first adjacent pixel in the substrate and adjacent to the first focus pixel in a positive first direction, a pixel being absent between the first focus pixel and the first adjacent pixel; a first micro-lens covering the first adjacent pixel; a second adjacent pixel in the substrate and adjacent to the second focus pixel in a positive first direction, a pixel being absent between the second focus pixel and the second adjacent pixel; and a second micro-lens covering the second adjacent pixel, and an area of the first micro-lens being different from an area of the second micro-lens.

An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.

Image sensor having pixels with different light receiving areas

An image sensor that provides a uniform sensitivity for pixels having color filters of the same color to increase the image quality is provided. The image sensor includes a substrate, a first grid pattern disposed on the substrate and including a first side wall and a second side wall opposite to the first side wall, a first pixel including a first photoelectric conversion element and a first color filter, and a second pixel including a second photoelectric conversion element and a second color filter. The first color filter contacts the first side wall and the second color filter contacts the second side wall. The first color filter and the second color filter are color filters of same color, and a first thickness of the first color filter is greater than a second thickness of the second color filter.

Image sensor with varying same-color color filter thickness

An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.

Image sensor with varying grid width

An image sensor includes two or more phase-difference detection pixels disposed adjacent to each other, a plurality of general pixels spaced apart from the phase-difference detection pixels, first and second peripheral pixels, and first to third light shields. The first and second peripheral pixels are adjacent to the phase-difference detection pixels, and between the phase-difference detection pixels and the general pixels. The first light shield is disposed in one of the general pixels and has a first width. The second light shield extends into the first peripheral pixel from a first area between the phase-difference detection pixels and the first peripheral pixel, and has a second width different from the first width. The third light shield extends into the second peripheral pixel from a second area between the phase-difference detection pixels and the second peripheral pixel, and has a third width different from the first width.

Image sensor for compensating for signal difference between pixels

The present invention relates to a silver coated glass frit used in a paste composition for forming a solar cell electrode, a method for preparing the same, and a silver paste composition using a silver coated glass frit for a solar cell. More specifically, the present invention relates to: a method for preparing a silver-coated glass frit wherein a silver coated glass frit, in which silver (Ag) is coated on a surface of the glass frit, is prepared through a reduction reaction occurring by adding, to a first solution containing silver nitrate (AgNO3) mixed with a glass frit and an amine, a second solution containing a reductant, and during the preparation process, a silver (Ag) coating layer is more uniformly formed on the surface of the glass frit by controlling the acidity of the first solution and the reaction temperature in the reduction reaction, thereby achieving an improved specific surface area; a silver-coated glass frit prepared by the method; and a silver paste composition for a solar cell wherein the composition is prepared by using the sliver-coated glass frit, and thus has significantly improved sintering characteristics and electrical conductivity.

Silver coated glass frit, method for preparing same, and silver paste compoisition using silver coated glass frit for solar cell

Cover for shoe protection

An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Image sensor and method for fabricating the same

An image sensor may include a substrate which includes a plurality of block regions. Each block region may include a separate plurality of pixel regions. Each pixel region may include a separate photoelectric element of a plurality of photoelectric elements in the substrate and a separate micro lens of a plurality of micro lenses on the substrate. Each micro lens of the plurality of micro lenses may be laterally offset from a vertical centerline of the pixel region towards a center of the block region. Each block region of the plurality of block regions may include a common shifted shape of the plurality of micro lenses of the block region.

Image sensors

The present invention provides a method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and nanoporous ultra-low dielectric thin film prepared by the same method. The method includes preparing a mixture of an organic silicate matrix-containing solution and a reactive porogen-containing solution; coating the mixture on a substrate to form a thin film; and heating the thin film with an ozone treatment. The prepared nanoporous ultra-low dielectric thin film could have a dielectric constant of about 2.3 or less and a mechanical strength of about 10 GPa or more by improving a pore size and a distribution of pores in the thin film by performing an ozone treatment with high temperature and optimization of the ozone treatment temperature.

Method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and a nanoporous ultra-low dielectric thin film prepared by the same method

Growing community of inventors

Hwaseong-si, South Korea

Bum Suk Kim