Samsung Electro-mechanics Co., Ltd.

Bum Seok Suh

In Wha Jeong

Kwang Soo Kim

Do Jae Yoo

Young Ki Lee

Tae Hyun Kim

Min Gyu Park

Kee Ju Um

Joon Seok Chae

Hyo Jin Lee

Sun Ho Kim

Chang Jae Heo

Chang Seob Hong

Si Joong Yang

Dong Hwan Kim

Ji Hyun Park

Jae Hyun Lim

In Hyuk Song

Jae Hoon Park

Young Hoon Kwak

Dong Soo Seo

Young Ho Sohn

Job Ha

Joon Hyung Cho

Won Jin Cho

Ji Yeon Oh

Jun Ho Lee

Min Hyuk Jung

There is provided a driving apparatus for driving an interleaved power factor correction circuit including a first main switch and a second main switch performing a switching operation with a predetermined phase difference and a first auxiliary switch and a second auxiliary switch forming a transformation path for surplus power existing before an ON operation of the first main switch and a second main switch, respectively, including: an input unit obtaining an input signal; a current sensing unit obtaining information regarding a current of the interleaved power factor correction circuit; and an output unit outputting a first control signal with respect to the first main switch, a third control signal with respect to the second main switch, a second control signal with respect to the first auxiliary switch, and a fourth control signal with respect to the second auxiliary switch, based on the input signal and the current information.

Driving apparatus for driving power factor correction circuit

Disclosed herein is an all-in-one power semiconductor module including a plurality of first semiconductor devices formed on a substrate; a housing molded and formed to include bridges formed across upper portions of the plurality of first semiconductor devices; and a plurality of lead members integrally formed with the housing and electrically connecting the plurality of first semiconductor devices and the substrate. According to the present invention, reliability can be improved by increasing bonding areas and bonding strength of semiconductor devices as well as processibilty can be enhanced and failure is reduced by adjusting a step difference with respect to an arrangement and height of the semiconductor devices. Further, a processing time resulting from an omission of a wire bonding process is reduced.

All-in-one power semiconductor module

There are provided a power factor correction circuit and a power supply including the same, the power factor correction circuit including a main switch adjusting a phase difference between a current and a voltage of input power, a main inductor storing or discharging the power according to switching of the main switch, a snubber circuit unit including a snubber switch forming a transfer path for surplus power present before the main switch is turned on and a snubber inductor adjusting an amount of a current applied to the snubber switch, and a reduction circuit unit reducing excessive power imposed on the snubber switch by varying inductance of the snubber inductor.

Power factor correction circuit with active snubber and power supply including the same

There is provided a power factor correction device including, a first switch switching input power to adjust a phase difference between a current and a voltage of the input power, a second switch switched on before the first switch is switched on to form a transfer path for residual power in the first switch, a first inductor charging and discharging energy according to switching of the first switch, and a second inductor adjusting an amount of current flowing through the second switch according to switching of the second switch, wherein the first inductor and the second inductor are inductively coupled.

Power factor correction device, power supply, and motor driver

There is provided a driver device for a power factor correction circuit including first and second main switches that are switched on and off with a phase difference therebetween, and first and second auxiliary switches that provide conduction paths of surplus voltage in the first and second main switches before the first and second main switches are switched on, the driver device including: an input unit receiving a plurality of input signals; and an output unit outputting a first control signal for the first main switch, a second control signal for the second main switch, a third control signal for the first auxiliary switch, and a fourth control signal for the second auxiliary switch based on a plurality of input signals.

Driver device for power factor correction circuit

An inverter includes an inverter unit including at least one inverter arm having at least one high side switch and at least one low side switch connected to each other in series between a ground and an input power terminal providing input power having a preset voltage level, and switching the input power to output AC power; and a high voltage gate driving circuit unit including at least one high voltage gate driving unit having a plurality of high voltage gate drivers connected in series between an input terminal of an instruction signal requesting a switching control of the inverter unit and an output terminal of a control signal controlling switching of the inverter unit, such that switching of the high side switch is controlled, and voltage generated at the time of switching the high side switch is divided and applied to the plurality of high voltage gate drivers.

Inverter with series connected gate driving circuits and voltage divider

There is provided an inverter including: an inverter unit including at least one inverter arm having a plurality of switches, and switching the input power according to control to output an alternating current power; at least one driving unit including at least one high voltage gate driving unit having a plurality high voltage gate drivers connected to one another in series between an input terminal of an instruction signal instructing a switching control of an inverter unit and an output terminal of a control signal controlling switching of the inverter unit to control switching driving of a high side switch and including at least one low voltage gate driver to control switching driving of a low side switch; and at least one bootstrap unit charging/discharging and dividing a voltage generated at the time of switching the plurality of switches according to switching control of the driving unit.

Gate driving circuit and inverter having the same

There are provided a power factor correction device and a method for controlling power factor correction using the same. The power factor correction device includes a power factor correction circuit and a control circuit. The power factor correction circuit includes first and second inductors connected to an input power source stage and first and second main switches performing a switching operation on the first and second inductors, respectively. The control circuit may provide control signals to the first and second main switches, respectively, and when phase currents flowing in the respective first and second inductors are unbalanced, the control circuit may change a phase of at least one of the first and second main switches to correct an imbalance of the phases.

Power factor correction apparatus and method for correcting power factor using the same

Disclosed herein is a heat radiating substrate including: a heat radiating plate having a step formed so that one side and the other side thereof have thicknesses different from each other; a conductor pattern layer formed over the heat radiating plate and including a mounting pad on which a control device and a power device are mounted and a circuit pattern; and an insulating layer formed between the heat radiating plate and the conductor pattern layer.

Heat radiating substrate and method of manufacturing the same

There is provided a power semiconductor module in which power semiconductor elements, integration of which may be difficult due to heating, are modularized. The power semiconductor module includes: a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, wherein the electronic elements have varying spaces therebetween.

Power semiconductor module

There is provided a power factor correction device including: a main switching unit including a first main switch and a second main switch performing a switching operation with predetermined phase differences; an auxiliary switching unit including a first auxiliary switch and a second auxiliary switch forming a transmission path for surplus power existing before the first main switch and the second main switch are turned on, respectively; an inductor unit positioned between a power input unit to which AC power is applied and the main switching unit and accumulating or discharging energy according to a switching operation of the main switching unit; and an auxiliary inductor unit regulating an amount of current flowing in the auxiliary switching unit in the event of a switching operation of the auxiliary switching unit.

Power factor correction device

Disclosed herein is a power module package including an external connection terminal, a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is formed to penetrate in a thickness direction thereof, and a semiconductor chip mounted on one surface of the substrate.

Power module package with a fastening unit including a non-conductive portion

There is provided a gate driving device, including: an inverter arm including a high-side switch and a low-side switch; a gate driving unit receiving an instruction signal to provide switching control to the inverter arm, outputting a control signal to control switching of the inverter arm, and including a plurality of gate drivers; and a balancing unit causing voltage applied to the plurality of gate drivers to be divided to be supplied to respective gate drivers among the plurality of gate drivers, according to the switching of the inverter arm based on the control signal.

Gate driving device including plurality of gate drivers supplied with equally divided voltage and inverter having the same

Disclosed herein is a semiconductor module package, including: a first module including a first heat radiation substrate and one or more first semiconductor elements and having a first N terminal and a first P terminal formed at one end thereof; a second module including a second heat radiation substrate and one or more second semiconductor elements, having a second N terminal and a second P terminal formed at one end thereof, and disposed so as to face the first module; and a first output terminal formed by electrically connecting the first module to the second module.

Semiconductor module package

Disclosed herein is a unit power module including: a first semiconductor chip having one surface on which a 1-1-th electrode and a 1-2-th electrode spaced apart from the 1-1-th electrode are formed and the other surface on which a 1-3-th electrode is formed, a second semiconductor chip having one surface on which a 2-1-th electrode is formed and the other surface on which a 2-2-th electrode is formed, a first metal plate contacting the 1-1-th electrode of the first semiconductor chip and the 2-1-th electrode of the second semiconductor chip, a second metal plate contacting the 1-2-th electrode of the first semiconductor chip and spaced apart from the first metal plate, a third metal plate contacting the 1-3-th electrode of the first semiconductor chip and the 2-2-th electrode of the second semiconductor chip, and a sealing member formed to surround the first metal plate, the second metal plate, and the third metal plate.

Growing community of inventors

Gyunggi-do, South Korea

Bum Seok Suh