Db Hitek Co., Ltd.

Bum Seok Kim

Jung Hyun Lee

Jin Hyo Jung

Seung Ha Lee

Sang Yong Lee

Dong Hoon Park

Dae Il Kim

Young Seok Kim

Chang Hee Kim

Hae Taek Kim

Kee Joon Choi

Mi Hye Jun

Duk Joo Woo

Bon Sug Koo

A signal control unit for an organic light emitting diode (OLED) display device includes a substrate structure including a plurality of active elements for the pixels, first metal electrodes disposed on the substrate structure, and configured to be electrically connected to a portion of each of the active elements, second metal electrodes disposed over and adjacent the first metal electrodes, configured to electrically connected to corresponding ones of the first metal electrodes, respectively, by via contacts extending vertically to electrically connect the first metal electrodes to the second metal electrodes, and interlayer insulating layer structure interposed between the first electrodes and the second electrodes and having the via contacts therein, the interlayer insulating layer structure having a stacked structure in which a first interlayer insulating layer, a light blocking layer and a second interlayer insulating layer are stacked in order.

Signal control unit for an organic light emitting diode display device

An element isolation structure includes a substrate defining a trench including an upper trench and a lower trench in communication with each other, the substrate including an inclined sidewall that forms the upper and lower trench; a first thin film liner on the substrate and conforming to the substrate, the first thin film liner having a substantially uniform thickness trench; a second thin film liner pattern selectively on a lower portion of the first thin film liner within a volume defined by the lower trench, the second thin film liner pattern having a substantially uniform thickness; a lower isolation layer formed on the second thin film liner pattern and substantially filling the volume defined by the lower trench; and an upper isolation layer formed on an upper portion of the first thin film liner and the lower isolation layer and substantially filling a volume defined by the upper trench.

Element isolation layer structure and method of manufacturing the same

A super junction MOSFET includes a substrate having a first conductive type, an epitaxial layer formed on the substrate, a set of pillars extending from the substrate through the epitaxial layer, the set of pillars being spaced apart from each other, a set of first wells, the set of first wells formed in the epitaxial layer to extend to an upper face of the epitaxial layer, and each of the set of first wells connected to at least one corresponding pillar of the set of pillars, a set of second wells of the first conductive type formed in the set of first wells, and a plurality of gate structures formed on the epitaxial layer, each extending in a first direction to have a stripe shape such that the gate structures are spaced apart from each other. Thus, the gate structure has a relatively small area to reduce an input capacitance of the super junction MOSFET.

Super junction MOSFET and method of manufacturing the same

A high voltage semiconductor device includes a gate electrode structure disposed on a substrate, a source region disposed in the substrate to be adjacent to one side of the gate electrode structure, a first drift region disposed in the substrate to be adjacent to another side of the gate electrode structure, a drain region electrically connected with the first drift region, and a device isolation region disposed on one side of the drain region. Particularly, the first drift region is spaced apart from the device isolation region.

High voltage semiconductor device

In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the substrate adjacent to one side of the gate structure, a drift region disposed at a surface portion of the substrate adjacent to another side of the gate structure, a drain region disposed at a surface portion of the drift region spaced from the gate structure, and an electrode structure disposed on the drift region to generate a vertical electric field between the gate structure and the drain region.

High voltage semiconductor device and method of manufacturing the same

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Seoul, South Korea

Bum Seok Kim