Samsung Electronics Co., Ltd.

Bum Kyu Kang

Jae Ho Ahn

Sung Min Hwang

Joon Sung Lim

Sung-Min Hwang

Sang Don Lee

Joon-Sung Lim

A nonvolatile memory device including a mold structure including a plurality of gate electrodes on a substrate, the plurality of gate electrodes including first, second, and third string selection lines sequentially stacked on the substrate; a channel structure that penetrates the mold structure and intersects each of the gate electrodes; a first cutting region that cuts each of the gate electrodes; a second cutting region that is spaced apart from the first cutting region in a first direction and cuts each of the gate electrodes; a first cutting line that cuts the first string selection line between the first cutting region and the second cutting region; a second cutting line that cuts the second string selection line between the first cutting region and the second cutting region; and a third cutting line that cuts the third string selection line between the first cutting region and the second cutting region.

Nonvolatile memory device

A three-dimensional semiconductor device includes a first gate group on a lower structure and a second gate group on the first gate group. The first gate group includes first pad regions that are: (1) lowered in a first direction that is parallel to an upper surface of the lower structure and (2) raised in a second direction that is parallel to an upper surface of the lower structure and perpendicular to the first direction. The second gate group includes second pad regions that are sequentially raised in the first direction and raised in the second direction.

Three-dimensional semiconductor device

Nonvolatile memory device and method for fabricating the same

Three-dimensional semiconductor device having stepped gate electrodes

Growing community of inventors

Suwon-si, South Korea

Bum Kyu Kang