Other

Infineon Technologies Ag

Kabushiki Kaisha Toshiba

Bum Ki Moon

Nicolas Nagel

Gerhard Beitel

Koji Yamakawa

Keitaro Imai

Andreas Hilliger

Gerhard Adolf Beitel

An improved barrier stack for inhibiting diffusion of atoms or molecules, such as Ois disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers. In one embodiment, the first barrier layer comprises first and second sub-barrier layers having mismatched grain boundaries. The sub-barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the sub-barrier layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with Ousing, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second sub-barrier layer. The second barrier layer comprises a conductive oxide.

Barrier stack with improved barrier properties

Reduced degradation to capacitor properties is disclosed. A hydrogen storage layer is provided over at least a portion a top capacitor electrode. The hydrogen storage layer absorbs and stores hydrogen, preventing hydrogen from diffusing to the capacitor. The hydrogen storage layer has, for example, lanthium nitride, titanium zirconium nitride, amorphous sm&#x2014;co, nanostructured carbon, or a combination thereof.

Element storage layer in integrated circuits

An barrier stack for inhibiting diffusion of atoms or molecules, such as O is disclosed. The barrier slack includes first and second barrier layers formed from, for example, Ir, Ru, Pd, Rh, or alloys thereof. The first barrier layer is passivated with O using, for example, a rapid thermal oxidation (RTO) prior to formation of the second barrier layer. The RTO forms a thin oxide layer on the surface of the first barrier layer. The thin oxide layer passivates the grain boundaries of the first barrier layer as well as promoting mismatching of the grain boundaries of the first and second barrier layer.

An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrO . Above the barrier stack is formed a capacitor.

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Tokyo, Japan

Bum Ki Moon