Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Proteometech Inc.

Seoul National University

Biobud Co., Ltd.

Gemvax & Kael Co., Ltd.

Kim, Sang Jae

Kael-gemvax Co.,ltd

Bum Joon Kim

Sung Tae Kim

Suk Ho Yoon

Ji Hye Shim

Sang-yeob Song

Young Chul Shin

Ki Sung Kim

Kook Jin Lim

Hyun Seok Ryu

Jong Ho Lee

Young Min Kim

Jung Hyun Lee

Young Min Park

Jin Hwan Kim

Sang Jae Kim

Hyun-Hee Park

Jong Sun Maeng

Seung Woo Choi

Jin Hyun Lee

Masayoshi Koike

Chan Mook Lim

Hye Jung Lee

Su Hyun Jo

Jae Hoon Hwang

Seung Wan Chae

Soo Jung Park

Hong Seok Kim

Geun Woo Kim

Ki Ho Park

Seong Ook Jeong

Sung Yu Hong

Sung Pyo Lee

Heum Mo Gu

Eun Deok Sim

Kyung Hwa Yoo

Jin Ik Lim

Yu Min Choi

Kwang Hoe Chung

Kyoung Jun Kim

Ok Hwan Kim

Mi Jung Kim

Jin Mook Lim

Myung Sook Chung

Tae Geun Kim

Ji Hun Shin

Dong Seob Choi

Young-Doug Sohn

Boung Kyun Kim

Kyung Hee Kim

Sung Jin Huh

Woo Jin Lee

A hepatitis B virus-derived polypeptide exhibits anti-viral effects not only on HIV-1 and HBV but also on all viruses by increasing the expression of type I interferon. The hepatitis B virus-derived polypeptide has a synergistic effect when co-administered with a conventional anti-viral agent. The hepatitis B virus-derived polypeptide is effectively usable in the treatment of virus-related diseases such as AIDS or liver diseases.

Hepatitis B virus-derived polypeptide and anti-viral use thereof

The present invention is related to a parallel line biochip for multiplex diagnosis. The parallel line biochip for multiplex diagnosis includes a plurality of line strips disposed in parallel, and a well configured to immobilize the line strips. Since the parallel line biochip for multiplex diagnosis can be used to connect two or more line strips in parallel, the parallel line biochip for multiplex diagnosis has an effect of measuring various materials present in a biological test sample at the same time.

Multi-diagnosis parallel-type linear biochip

An information processing system includes a first electronic device configured to collect data, a second electronic device configured to obtain at least a portion of the data from the first electronic device and process the at least the portion of the data, and a server configured to support a sharing service that obtains the processed data from the second electronic device and posts the processed data in a designated method. The second electronic device is configured to transmit account information on at least one account joined to the sharing service to the first electronic device. The first electronic device is configured to analyze the account information to verify the at least one account, generate an object supporting posting the processed data on the sharing service, and output the object to a display of the first electronic device.

Electronic device and information processing system including the same

Provided is a composition for detecting a protein, containing a tyrosine oxide-coupled biomaterial. Various diseases may be easily and rapidly diagnosed by easily detecting the composition containing a tyrosine oxide-coupled biomaterial according to the present invention, by identifying a color of the protein bound with a tyrosine oxide-coupled biomaterial prepared by binding tyrosine oxide, which is a natural pigment present in a living body, with the biomaterial. Accordingly, the composition of the present invention may be used to easily and rapidly diagnose various diseases in real time in an operating room, and may usefully replace conventional histological analysis without a secondary antibody reaction and a final operation of color expression.

Composition for detecting proteins containing tyrosine oxide-coupled biomaterial

A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Method of manufacturing semiconductor light emitting device

A semiconductor light emitting device includes a substrate, a semiconductor laminate having a base semiconductor layer, a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially formed on the substrate and divided by an isolation region to provide a plurality of light emitting cells, an intermediate separation layer interposed between the base semiconductor layer and the first conductivity-type semiconductor layer, a plurality of first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, of the plurality of light emitting cells, and a wiring unit connecting the first and second electrodes of different light emitting cells.

Semiconductor light emitting device, light emitting module, and illumination apparatus

A nitride-based semiconductor light emitting device includes an anti-bowing layer having a composition of AlGaN (0.01&#x2266;x&#x2266;0.04), and a light emitting structure formed on the anti-bowing layer and including a first conductivity-type nitride semiconductor layer, an active layer, and a second conductivity-type nitride semiconductor layer.

Nitride-based semiconductor light emitting device

There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

Provided is a chemical vapor deposition (CVD) apparatus, including: a reaction chamber including an inner pipe having an internal space, and an external pipe configured to cover the inner pipe so as to maintain a sealing state thereof; a wafer holder disposed within the inner pipe and receiving a plurality of wafers stacked therein; and a gas supplier including at least one stem pipe disposed at the outside of the reaction chamber so as to supply a reactive gas thereto, a plurality of branch pipes connected to the stem pipe to introduce the reactive gas from the outside of the reaction chamber into the reaction chamber, and a plurality of spray nozzles provided with the branch pipes to spray the reactive gas to the plurality of respective wafers.

CVD apparatus and method of forming semiconductor superlattice structure using the same

An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.

LED package

The present invention relates to a batroxobin-encoding nucleotide sequence and/or a mutated &#x3b1;-factor secretion signal sequence, and a vector and a transformant using the same. The batroxobin-encoding nucleotide sequence of this invention exhibits an excellent expression efficiency in yeast, particularand the recombinant batroxobin is obtained at 4-13 fold higher yield than natural-occurring batroxobin-encoding sequences. The protein expression system which uses the batroxobin-encoding nucleotide sequence as well as mutated &#x3b1;-factor secretion signal peptide sequence of this invention obtains the recombinant batroxobin at about 20-fold higher yield than natural-occurring batroxobin-encoding sequences. In addition, the recombinant batroxobin prepared using the sequence of this invention has a significantly plausible activity and stability compared with natural-occurring batroxobin.

Mutated nucleotide sequences of batroxobin, mutated &#x3b1; factor secretion signal sequence and processes for preparing batroxobin using the same

A nitride semiconductor light emitting diode (LED) comprises an n-type nitride semiconductor layer; an electron emitting layer formed on the n-type nitride semiconductor layer, the electron emitting layer being composed of a nitride semiconductor layer including a transition element of group III; an active layer formed on the electron emitting layer; and a p-type nitride semiconductor layer formed on the active layer.

Nitride semiconductor light emitting diode

A high quality white light emitting device suitable for miniaturization. The white light emitting device according to the present invention includes a substrate and a light emitting structure composed of an n-semiconductor layer, an active layer and a p-semiconductor layer. The light emission structure emits first emission light. The white light emitting device also includes a wavelength-converting film for absorbing and converting the first emission light to second emission light of another wavelength. The wavelength-converting film is made of europium-silicate.

White light emitting device

Growing community of inventors

Seoul, South Korea

Bum Joon Kim