Samsung Electronics Co., Ltd.

Bum-Jae Lee

Young-Ho Kim

Young-Ju Kim

Soo-Young Kim

Hyuk-Joon Kwon

Kyu-Nam Lim

Bok-Yeon Won

Su-a Kim

Sang-Keun Han

Hyun-chul Yoon

Ji-Suk Kwon

Woong-dai Kang

Su-A Kim

Min-Woo Won

Ji-Hak Yu

Seok-Jae Lee

A memory device including a memory cell array region, includes, column selection signal lines formed in a first column conduction layer of the memory cell array region and extending in a column direction, global input-output data lines formed in a second column conduction layer of the memory cell array region different from the first column conduction layer and extending in the column direction and power lines formed in a shield conduction layer of the memory cell array region between the first column conduction layer and the second column conduction layer. The noises in the signal lines and the power lines may be reduced and performance of the memory device may be enhanced by forming the column selection signal lines and the global input-output data lines in different column conduction layers and forming the power lines in the shield conduction layer between the column conduction layers.

Memory device and method of disposing conduction lines of the same

A semiconductor memory device having a bit line sense amplifier connected to a bit line pair may include a precharge part to precharge first and second drive nodes of the bit line sense amplifier to an equal voltage level. The device may include a switching part operatively connecting the first and second precharge nodes to the first and second drive nodes in response to sense amplifier drive signals applied during a data non-access mode. To drive power in the bit line sense amplifier, the precharge voltage may be applied in a precharge state to precharge the first and second drive nodes to the equal voltage level, the device may shift from the precharge state to an operational state to cut off the applied precharge voltage, and driving voltages may be applied to the first and second drive nodes to power the bit line sense amplifier of the device.

Semiconductor memory device having improved bit line sensing operation and method for driving power in a bit line sense amplifier of the semiconductor memory device

Growing community of inventors

Hwaseong-si, South Korea

Bum-Jae Lee