Volterra Semiconductor Corporation

Silergy Semiconductor Technology (hangzhou) Ltd

Silergy Technology

Budong You

Marco A Zuniga

Chuan Peng

Meng Wang

Hui Yu

Yicheng Du

Xianguo Huang

Yang Lu

Zheng Lyu

Hamza Yilmaz

Ion E Opris

David B Lidsky

Anthony J Stratakos

Andrew J Burstein

Trey Roessig

Ognjen Djekic

Biljana Beronja

Xunyi Song

Alexandr Ikriannikov

Alexander Ikriannikov

A laterally diffused metal oxide semiconductor device can include: a well region having a second doping type; a reduced surface field effect layer of a first doping type formed by an implantation process in a predetermined region of the well region, where a length of the reduced surface field effect layer is less than a length of the well region; a body region of the first doping type extending from a top surface of the well region into the well region; a drain portion of the second doping type extending from the top surface of the well region into the well region; and an insulating structure located between the body region and the drain portion, at least a portion of the insulating structure is located on the top surface of the well region.

Laterally diffused metal oxide semiconductor device and method for manufacturing the same

A laterally diffused metal oxide semiconductor device can include: a base layer; a source region and a drain region located in the base layer; a first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; a second conductor at least partially located on the voltage withstanding layer; and a source electrode electrically connected to the source region, where the first and second conductors are spatially isolated, and the source electrode at least covers a space between the first and second conductors.

A method for manufacturing a laterally diffused metal oxide semiconductor device and a semiconductor device are provided. A body region is formed before forming a gate dielectric layer and a gate conductor, thereby reducing a channel length of the semiconductor device, thus reducing the on-resistance. In addition, a drift region serves as both a region withstanding a high voltage and a diffusion suppression region for suppressing lateral diffusion of the body region, thereby further reducing the channel length of the semiconductor device, thus manufacturing a short-channel semiconductor device.

Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device

A laterally diffused metal oxide semiconductor structure can include: a base layer; a source region and a drain region located in the base layer; first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; and a second conductor at least partially located on the voltage withstanding layer, where the first and second conductors are spatially isolated, and a juncture region of the first dielectric layer and the voltage withstanding layer is covered by one of the first and second conductors.

Laterally diffused metal oxide semiconductor structure and method for manufacturing the same

Disclosed are systems, devices, circuits, components, mechanisms, and processes in which a switching mechanism can be coupled between components. The switching mechanism is configured to have an on state or an off state, where the on state allows current to pass along a current path. A monitoring mechanism has one or more sensing inputs coupled to sense an electrical characteristic at the current path. The electrical characteristic can be a current, voltage, and/or power by way of example. The monitoring mechanism is configured to output a reporting signal indicating the sensed electrical characteristic. The monitoring mechanism can be integrated with the switching mechanism on a chip.

Integrated protection devices with monitoring of electrical characteristics

The present disclosure relates to a method for manufacturing a CMOS structure. A first gate stack is formed on a semiconductor substrate in a first region. A second gate stack is formed on the semiconductor substrate in a second region. A dopant of a first type is implanted with the first gate stack and the second gate stack as a hard mask to form a lightly-doped drain region of the first type. A dopant of a second type is implanted by using a first mask and with the second gate stack as a hard mask to form a lightly-doped drain region of the second type. The first mask blocks the first region and exposes the second region. When the lightly-doped drain region of the second type is formed, the dopant of the second type over dopes a predetermined region of the lightly-doped drain region of the first type.

Method for manufacturing CMOS structure

The present disclosure relates to a method for manufacturing a CM OS structure. Shallow trench isolation is formed in a semiconductor substrate. A first region is defined for a first MOSFET and a second MOSFET of a first type and a second region is defined for a third MOSFET and a fourth MOSFET of a second type, by shallow trench isolation. First to fourth Gates sacks are formed on the semiconductor substrate, each of which includes a gate conductor and a gate dielectric and the gate dielectric is disposed between the gate conductor and the semiconductor substrate. The first and second gate stacks are formed in the first region, and the third and fourth gate stacks are formed in the second region. The gate dielectrics of the first and third gate stacks have a first thickness, and the gate dielectrics of the second and fourth gate stacks have a second thickness larger than the first thickness. Some masks are commonly used in various steps in this process so that the number of the masks is reduced.

The present disclosure relates to a lateral double-diffused metal oxide semiconductor transistor and a method for manufacturing the same. In the method, a high-voltage gate dielectric is formed at a surface of a semiconductor layer. A thin gate dielectric is formed above the substrate and has at least a portion adjacent to the high-voltage gate dielectric. A gate conductor is formed above the thin gate dielectric and the high-voltage gate dielectric. A first mask is used for patterning the gate conductor to define a first sidewall of the gate conductor above the thin gate dielectric. A second mask is used for patterning the gate conductor to define a second sidewall of the gate conductor at least partially above the high-voltage gate dielectric. Source and drain regions are formed to have a first doping type. The method further comprises doping through the first mask to form a body region of a second doping type. The second doping type is opposite to the first doping type. The method simplifies a manufacturer process and improves reliability of the resultant devices.

Method for manufacturing lateral double-diffused metal oxide semiconductor transistor

A transistor includes a substrate, a well formed in the substrate, a drain including a first impurity region implanted in the well, a source including a second impurity region implanted in the well and spaced apart from the first impurity region, a channel for current flow from the drain to the source, and a gate to control a depletion region between the source and the drain. The channel has an intrinsic breakdown voltage, and the well, drain and source are configured to provide an extrinsic breakdown voltage lower than the intrinsic breakdown voltage and such that breakdown occurs in a breakdown region in the well located outside the channel and adjacent the drain or the source.

Method of fabricating power transistor with protected channel

Methods and apparatuses related to packaging a monolithic voltage regulator are disclosed. In one embodiment, an apparatus includes: (i) a monolithic voltage regulator with a transistor arranged as parallel transistor devices; (ii) bumps on the monolithic voltage regulator to form connections to source and drain terminals of the transistor; (iii) a single layer lead frame with a plurality of interleaving lead fingers coupled to the monolithic voltage regulator via the bumps, where the single layer lead frame includes first and second surfaces, where the first surface includes a first pattern to form connections to the bumps, and where the second surface includes a second pattern that is different from the first pattern; and (iv) a flip-chip package encapsulating the monolithic voltage regulator, the bumps, and the single layer lead frame, where the flip-chip package has external connectors of the monolithic voltage regulator at the second surface of the single layer lead frame.

Method of connecting to a monolithic voltage regulator

A transistor structure includes a p-type substrate, an n-well implanted in the substrate, a p-doped p-body implanted in the n-well, first and second transistors, an input line, and an output line. The first transistor includes a first gate, a first source, and a first drain, and the second transistor includes a second gate, a second source, and a second drain. The first source includes a first p+ region and a first n+ region, and the first drain includes a second n+ region. The second source includes a third n+ region and a second p+ region, and the second drain includes a third p+ region. The input line connects the first gate and the second gate, and the output line connects the second n+ region and the third p+ region.

Lateral double-diffused MOSFET

Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate includes a first oxide layer formed over a substrate, and the second gate includes a second oxide layer formed over the substrate. The first gate is located a pre-determined distance from the second gate. A digitally implemented voltage regulator is also provided that includes a switching circuit having a dual gate LDMOS transistor.

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Fremont, CA, United States of America

Budong You