Jusung Engineering Co., Ltd.

Bu-Il Jeon

Jae-Chul Do

Myung-Gon Song

Jung-Rak Lee

A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.

Power supplying means having shielding means for feeding line and substrate processing apparatus including the same

A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Gas distributing device and substrate processing apparatus including the same

In one embodiment, a method of removing film materials on an edge area of a substrate in a plasma etching apparatus is disclosed. The apparatus includes a chamber, a substrate support, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, and an antenna disposed on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber. The method includes spraying a curtain gas to a space between the shield and the substrate, using a curtain gas passageway; and spraying a reaction gas to an area between a side surface of the shield and an inner sidewall of the chamber formed within the shield, using a reaction gas supply passageway.

Plasma etching apparatus

The present invention relates to a plasma etching apparatus. In the apparatus, potential difference is applied between a substrate support with a substrate seated thereon and a electrode surrounding an edge region of the substrate, and a distance between the substrate and the electrode is set to 3 mm or less so as to locally generate plasma in an area between the substrate and the electrode, thereby removing particles and a thin film in the edge region of the substrate.

The present invention relates to a plasma etching apparatus, which comprises a chamber, a substrate support disposed inside the chamber to support a substrate, a shield disposed with a gap on the substrate such that plasma is not generated therein while allowing an edge portion of the substrate to be exposed, an antenna disposed at a position on an outer wall of the chamber to apply plasma-generating power to an area between the edge portion of the substrate and an inner wall of the chamber, and a bias-applying unit for applying bias to the substrate support. According to the present invention, the shield and the substrate support prevent plasma from being generated at other portions of a substrate except an edge portion of the substrate. Inductively coupled plasma is employed to generate plasma with high density, thereby removing a thin film and particles remained at the edge portion of the substrate. In addition, by means of the discharging of inductively coupled plasma, it is possible to improve an etching rate at the edge portion of the substrate and to adjust the profile of an etching process at a low processing pressure.

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Gyeonggi-do, South Korea

Bu-Il Jeon