Purdue Research Foundation

Bryce Chryst Walker

Rakesh Agrawal

Carol Anne Handwerker

Ruihong Zhang

A direct solution method based on a versatile amine-thiol solvent mixture which dissolves elemental metals, metal salts, organometallic complexes, metal chalcogenides, and metal oxides is described. The metal containing and metal chalcogenide precursors can be prepared by dissolving single or multiple metal sources, chalcogens, and/or metal chalcogenide compounds separately, simultaneously, or stepwise. Multinary metal chalcogenides containing at least one of copper, zinc, tin, indium, gallium, cadmium, germanium, and lead, with at least one of sulfur, selenium, or both are obtained from the above-mentioned metal chalcogenide precursors in the form of thin films, nanoparticles, inks, etc. Furthermore, infiltration of metal containing compounds into a porous structure can be achieved using the amine-thiol based precursors. In addition, due to the appreciable solubility of metal sources, metal chalcogenides, and metal oxides in the mixture of amine(s) and thiol(s), this solvent mixture can be used to remove these materials from a system.

Homogeneous precursor formation method and device thereof

Presented herein is a method for obtaining a dissolved selenium liquid mixture from solid selenium. The method involves mixing an amine solvent and a thiol solvent with the solid selenium to produce a liquid intermediate solution and removing a sulfur containing compound from the liquid intermediate solution to produce a dissolved selenium liquid mixture. A method for obtaining dissolved sulfur liquid mixture by mixing an amine with a thiol to produce a liquid solution that dissolves sulfur to produce a dissolved sulfur liquid mixture is also presented. In addition, a method for obtaining a dissolved sulfur and selenium liquid mixture from solid selenium and solid sulfur by mixing an amine solvent with a thiol solvent is presented.

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Hillsboro, OR, United States of America

Bryce Chryst Walker