Spansion LLC.

Advanced Micro Devices Corporation

Bryan William Hancock

Nicholas H Tripsas

Richard C Blish

Allan Parker

Tat Hin Tan

Jackson Huang

Ed Bautista

Systems and/or methods that facilitate error correction of data are presented. An error correction code (ECC) control component facilitates enabling or disabling error correction of data being written to or read from memory, such as flash memory, based on ECC indicator data associated with a piece of data. The ECC control component can analyze data, parity code, and/or indicator data associated with the incoming data and/or data stored in the memory location where the incoming data is to be written to determine whether parity code can be written for the incoming data and/or whether error correction can be enabled with respect to the incoming data. Error correction can be enabled when an indicator bit associated with the data is unprogrammed (e.g., bit set to '1' state) and can be disabled by programming the indicator bit (e.g., bit set to a '0' state).

Error correction coding in flash memory devices

One embodiment of the invention relates to a method for refreshing a nonvolatile memory array. In the method, a threshold voltage of a multi-bit memory cell is analyzed to determine if it has drifted outside of a number of allowable voltage windows, wherein each allowable voltage windows corresponds to a different multi-bit value. If the threshold voltage of the cell has drifted outside of the number of allowable voltage states, then the cell is recovered by adjusting at least one voltage boundary of at least one of the number of allowable voltage states.

Methods and systems for recovering data in a nonvolatile memory array

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Los Altos, CA, United States of America

Bryan William Hancock