At&t Bell Laboratories

At+t Corp.

Bryan P Segner

Louis A Koszi

Avishay Katz

William C Dautremont-Smith

Peter M Thomas

John William Osenbach

Mark B Cholewa

A method of fabricating a semiconductor electro-optical device in which a cleaving apparatus is used to separate the wafer into bars of semiconductor material by striking the wafer from the epitaxial side, directly beneath the substrate side scribe mark. A series of angularly shaped trenches are etched across the epitaxial side of the semiconductor bars to permit bar separation into individual devices that allows a plurality of bars to be processed simultaneously.

Method of fabrication for electro-optical devices

Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-500.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).

Method of making a semiconductor device

The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425.degree.-475.degree. C. for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contacts that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10.sup.-7 .OMEGA..multidot.cm.sup.2).

Rapid thermal processing method of making a semiconductor device

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Piscataway, NJ, United States of America

Bryan P Segner