Hitachi, Ltd.

Centre National De La Recherche Scientifique

Université Paris Sud Xi

University of Nottingham

Université Paris—sud

Institute of Physics Ascr V. V. I.

Bryan Gallagher

David Arfon Williams

Claude Chappert

Joerg Wunderlich

Thibaut Devolder

Tomas Jungwirth

Jan Zemen

Andrew Irvine

Jörg Wunderlich

Richard Campion

Pierre Roy

Tomas Janda

Kevin Edmonds

Peter Wadley

Jakub Zelezny

Joao Godinho

Rubén Otxoa

A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Magnetoresistive device

Method of controlling a magnetoresistive device using an electric field pulse

A single-electron transistor () has an elongate conductive channel () and a side gate () formed in a 5 nm-thick layer () of GaMnAs. The single-electron transistor () is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Single-charge tunnelling device

Growing community of inventors

Nottingham, United Kingdom

Bryan Gallagher