Entegris, Inc.

Advanced Technology Materials, Inc.

Other

Infineon Technologies LLC

Intel Corporation

Mst Technology Gmbh

Bryan Clark Hendrix

Thomas H Baum

Jeffrey F Roeder

Chongying Xu

Philip S H Chen

Tianniu Chen

Ziyun Wang

Frank S Hintermaier

William Hunks

Gregory T Stauf

Debra A Desrochers

Scott L Battle

Matthias Stender

John N Gregg

Robert Wright, Jr

Steven M Bilodeau

Weimin Li

Peter C Van Buskirk

Seobong Chang

Sungsil Cho

Ravi Kumar Laxman

David Walter Peters

James J Welch

John M Cleary

Jae Eon Park

Han Wang

Shawn D Nguyen

Carlo Waldfried

Christine Dehm

Donn Naito

David James Eldridge

Wolfgang Hoenlein

Eric Condo

Jaeeon Park

Shuang Meng

Adrien Lavoie

Jose I Arno

Dahye Kim

Harsono S Simka

Juan E Dominguez

Michael J Wodjenski

Thomas M Cameron

Jacob Thomas

Melissa A Petruska

David Kuiper

Richard A Cooke

Ing-Shin Barry Chen

I-Kuan Lin

Witold Paw

Nilesh Gunda

Peter Van Buskirk

Soojin Lee

Manuel F Gonzales

Benjamin H Olson

Debra Desrochers Christos

Kenney R Jordan

Sangbum Han

Jeff Roeder

Richard Ulrich Assion

Oleg Byl

Ying Tang

Sharad N Yedave

John J Plombon

Frank DiMeo, Jr

Joseph Han

James Anthony O'Neill

David M Ermert

Jeffrey W Neuner

Jordan Hodges

Sebum Cheon

Kyle Bartosh

James Woeckener

HwanSoo Kim

SooJin Lee

DaHye Kim

SangJin Lee

Gavin Richards

Debra A Desrochers-Christos

Robert L Wright

Susan V DiMeo

Dingkai Guo

Woosung Jang

Donn K Naito

Philip SH Chen

Jeffrey R Roeder

A tray for a vaporization vessel that includes a tray having a side wall, a bottom plate, one or more apertures that extend through the bottom plate, and a duct that extends through and from the bottom plate. The tray configured to support a solid reagent to be vaporized. A method of assembling the tray that includes forming a first tray that has the side wall and the bottom plate. A vaporization vessel that includes one or more of the trays.

Vaporization vessel and method

Described are metal bodies made of magnesium-containing metal and having a magnesium fluoride surface passivation region formed at a surface of the body, as well as methods of forming a magnesium fluoride surface passivation region at a surface of a metal body, and uses for the bodies.

Metal body having magnesium fluoride region formed therefrom

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)) or tungsten hexacarbonyl (W(CO)) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of HO is utilized. This pulsing with HO vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)-based CVD processes.

Group VI metal deposition process

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide.

Silicon precursor compounds and method for forming silicon-containing films

Described are vapor deposition methods for depositing metal films or layers onto a substrate, e.g., wherein the metal is molybdenum or tungsten; the methods involve vapor deposition of a metal layer onto a substrate from a metal-containing precursor in the presence of reducing gas (e.g., hydrogen) and a nitrogen-containing reducing compound.

Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Methods for depositing tungsten or molybdenum films

The present disclosure relates to a bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors, and ultra high purity versions thereof, methods of making, and methods of using these bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursors in a vapor deposition process. One aspect of the disclosure relates to an ultrahigh purity bridging asymmetric haloalkynyl dicobalt hexacarbonyl precursor of the formula Co(CO)(RC≡CR), where Rand Rare different organic moieties and Ris more electronegative or more electron withdrawing compared to R.

Haloalkynyl dicobalt hexacarbonyl precursors for chemical vapor deposition of cobalt

Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing Oand NHco-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Vapor deposition precursor compounds and process of use

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Coatings for enhancement of properties and performance of substrate articles and apparatus

Provided are certain liquid silicon precursors useful for the deposition of silicon-containing films, such as films comprising silicon, silicon nitride, silicon oxynitride, silicon dioxide, silicon carbide, carbon-doped silicon nitride, or carbon-doped silicon oxynitride. Also provided are methods for forming such films utilizing vapor deposition techniques.

Precursors and methods for preparing silicon-containing films

Provided is a method for forming a silicon oxycarbonitride film (SiOCN) with varying proportions of each element, using a disilane precursor under vapor deposition conditions, wherein the percent carbon incorporation into the SiOCN film may be varied between about 5 to about 60%, by utilizing co-reactants chosen from oxygen, ammonia, and nitrous oxide gas. The carbon-enriched SiOCN films thus formed may be converted to pure silicon dioxide films after an etch stop protocol by treatment with Oplasma.

Method for forming carbon rich silicon-containing films

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that deleterious to the substrate article, structure material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Chemical vapor deposition (CVD) processes which use a ruthenium precursor of formula RRRu(0), wherein Ris an aryl group-containing ligand, and Ris a diene group-containing ligand and a reducing gas a described. The CVD can include oxygen after an initial deposition period using the ruthenium precursor and reducing gas. The method can provide selective Ru deposition on conductive materials while minimizing deposition on non-conductive or less conductive materials. Further, the subsequent use of oxygen can significantly improve deposition rate while minimizing or eliminating oxidative damage of the substrate material. The method can be used to form Ru-containing layers on integrated circuits and other microelectronic devices.

Chemical vapor deposition processes using ruthenium precursor and reducing gas

Provided is improved methodology for the nucleation of certain metal nitride substrate surfaces utilizing certain silicon-containing halides, silicon-containing amides, and certain metal precursors, in conjunction with nitrogen-containing reducing gases. While utilizing a pretreatment step, the methodology shows greatly improved nucleation wherein a microelectronic device substrate having such a metal nitride film deposited thereon has a thickness of about 10 Å to about 15 Å and less than about 1% of void area. Once such nucleation has been achieved, traditional layer-upon-layer deposition can rapidly take place.

Method for nucleation of conductive nitride films

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Danbury, CT, United States of America

Bryan Clark Hendrix