Axcelis Technologies, Inc.

Bryan C Lagos

Robert J Mitchell

Dale K Stone

Klaus Petry

James Carroll

David J Chipman

Gary Rosen

Dennis M Klesel

The present invention is directed to a J-R electrostatic clamp (ESC) and method for forming same. The ESC comprises a ceramic layer for clamping a wafer thereto, and a plurality of electrodes arranged across the ceramic layer in an interior region and a peripheral region of the backside surface, wherein a plurality of electrode groups are defined by electrodes in the interior regions and peripheral regions. A first insulating layer generally isolates the electrode groups from one another, and an interconnect layer comprising a plurality of electrically conductive vias and interconnects electrically connect the electrodes associated with each respective electrode group. Each electrode group comprises a connection node, wherein the respective electrode group is operable to connect to a respective voltage potential. A second insulating layer generally encapsulates the interconnect layer. The method comprises patterning the electrodes, first insulating layer, interconnect layer, and second insulating layer to form the ESC.

Method for fabricating a Johnsen-Rahbek electrostatic wafer clamp

The invention provides a system and apparatus by which a workpiece pad is supplied to support workpieces being implanted in a rotating or spinning batch implanter process disk. The workpiece pad provides reduced surface adhesion forces and sufficient heat transfer from the workpieces to the process disk, and furthermore reduces particle generation and contamination of the workpiece from the workpiece pad. The workpiece pad furthermore comprises an ordered array of micro-structures. In addition, the invention includes a method of forming a workpiece pad comprising an ordered array of micro-structures.

Method for molding a polymer surface that reduces particle generation and surface adhesion forces while maintaining a high heat transfer coefficient

The invention provides apparatus by which a cooling gas is supplied from a stationary source to the back side of batch ion implanter workpieces being implanted in a rotating or spinning batch implanter process disk. The cooling gas provides improved heat transfer from the workpieces to the process disk, which may be advantageously combined with circulation of cooling fluid through passages in the process disk to remove heat therefrom. The invention further includes a rotary feedthrough employed to transfer the cooling gas from a stationary housing to a gas chamber in a rotating shaft which spins the batch implanter process disk. In addition, a seal apparatus is provided which seals the cooling gas applied to the back sides of the workpieces from the vacuum in which the front sides of the workpieces are implanted.

Apparatus for the backside gas cooling of a wafer in a batch ion implantation system

The present invention relates to an electrostatic clamp and comprises a dielectric layer overlying an electrode and a doped region in the dielectric layer. The doped region of the dielectric layer is electrically conductive, and when the doped region is coupled to a circuit ground potential, the doped region of the dielectric layer is operable to bleed off charge which accumulates on a workpiece residing thereon during processing. The present invention further comprises a method of forming an electrostatic clamp which comprises the steps of forming an electrically insulating layer over an electrode and doping a portion of the electrically insulating layer, wherein the doped portion of the electrically insulating layer becomes electrically conductive.

Method and apparatus for the grounding of process wafers by the use of conductive regions created by ion implantation into the surface of an electrostatic clamp

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Danvers, MA, United States of America

Bryan C Lagos