Institut Mines-telecom

Avonex Corporation

Institut Telecom/telecom Paristech

Oclaro Inc.

Bruno Thedrez

Ghaya Rekaya-Ben Othman

Yves Jaouen

Sami Mumtaz

Jean-Louis Gentner

Francois Alexandre

Olivier Gauthier-Lafaye

A transmitter and a receiver for an optical telecommunication system of the WDM type are disclosed. In one aspect, the transmitter uses a chromato-temporal encoder which, with each block of symbols to be transmitted, associates a code matrix, where each element of the matrix corresponds to a wavelength and a use of the channel. The transmitter includes multiple modulators, where each modulator modulates a laser beam at a wavelength during a use of the channel by an element corresponding to the code matrix. The beams modulated in this manner are multiplexed in an optical fiber. Another embodiment using both a wavelength and a polarization encoding is also proposed.

Method and system for WDM transmission with chromato-temporal encoding

A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 &#x3bc;m, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted InGaAsNPwith x&#x2267;0.48, y&#x2266;1&#x2212;z&#x2212;p, z&#x2266;0.05, p&#x2267;0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a 'massive' layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

Semiconductor optical device on an indium phosphide substrate for long operating wavelengths

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Paris, France

Bruno Thedrez