Commissariat a L'energie Atomique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Bruno Remiat

Laurent Vandroux

Yannick Veschetti

Florent Souche

Florence Fusalba

A method of depositing a non-continuous coating of a first material on a substrate, comprising: a) the formation of a mask on this substrate, by forming at least two mask layers, and etching of at least one cavity in these layers, this cavity having an outline such that a coating, deposited on the substrate, through the cavities of the mask, has at least one discontinuity over said outline of the cavity; b) the deposition of the first material on the substrate, through the cavities of the mask, the coating thus deposited having at least one discontinuity over the outline of said cavity; and c) the mask is removed.

Method of depositing localized coatings

A photovoltaic cell including at least: a closed chamber including two end walls arranged opposite one another, with at least one being intended to receive incident light radiation, and including at least one side wall formed by at least one stack of a first electrode and a second electrode electrically insulated from one another, the first electrode and second electrode each having an annular shape each being disposed at a periphery of a respective one of the two end walls; at least two non-miscible electrolytes placed in the closed chamber, forming two superimposed layers of which one is in contact with the first electrode and the other is in contact with the second electrode; and a photoactive layer, placed in the closed chamber, that achieves a photovoltaic conversion of energy of the incident light radiation.

Photovoltaic cell with non-miscible electrolytes

A method of producing a photovoltaic cell. A passivation layer based on an intrinsic amorphous semiconductor is deposited on a back surface of a substrate based on a crystalline semiconductor. A first sacrificial mask including at least one through-opening on the passivation layer is screen-printed at a temperature less than or equal to 250&#xb0; C. A doped amorphous semiconductor layer of a first type of conductivity is deposited at least in the opening. The first sacrificial mask is removed, leaving at least one doped amorphous semiconductor pad of the first type of conductivity remaining at the opening of the first sacrificial mask.

Growing community of inventors

Grenoble, France

Bruno Remiat