Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Epcos Ag

Bruno Reig

Henri Sibuet

Alexandre Reinhardt

Stéphane Monfray

Damien Saint-Patrice

Jean-Louis Pornin

Antonio Clemente

Gudrun Henn

Marcel Giesen

Arnoldus Den Dekker

Alexandre Leon

Gabriele Navarro

Gabriel Pares

Vincent Puyal

Florent Greco

Christel Dieppedale

Stephan Borel

Laurent Dussopt

Philippe Cathelin

Jean-Claude Bastien

Denis Mercier

Alain Fleury

Samara Gharbieh

Axel Sauvage

An electromechanical device includes a piezoelectric support delimited by a surface, or by two surfaces parallel to each other, and, on this support, a resonator for elastic waves propagating parallel to the surface or surfaces, the resonator including two reflectors that delimit the resonator and which are reflective for the waves, several interfacing transducers, to generate the waves from an electrical signal, and several transducers for controlling the resonance frequency, each transducer including a first electrode and a second electrode that are interdigitated, the transducers being arranged along the propagation path followed by the waves in the resonator, with, along the path, an alternation between interfacing transducer and tuning transducer.

Electromechanical device with adjustable resonance frequency

The present description concerns a transmitarray or reflectarray cell (), comprising at least two switches made of a phase-change material.

Transmit or reflectarray antenna cell

A stack for fabricating an integrated circuit intended to perform an electromagnetic-lens function for a reconfigurable transmitarray antenna, the stack including in succession: a substrate that includes a set of first active components configured to generate a phase shift, and that has first and second opposite surfaces, the first active components being integrated monolithically into the substrate; a metal layer, forming a ground plane on the first surface of the substrate; a layer of a cured polymer, formed on the metal layer; vias that are electrically insulated from the metal layer and that are arranged to electrically connect pairs of planar antennas, each electrically connected pair of planar antennas including first and second planar antennas that are aligned along the normal to the first and second surfaces of the substrate.

Stack for fabricating an integrated circuit intended to perform an electromagnetic-lens function for a reconfigurable transmitarray antenna

An RF switch provided with a first region based on a phase change material disposed between a first conductive element and a second conductive element and state control means for said first region, the switch being further provided with at least one first decoupling switch provided with a second region of phase change material.

RF/DC decoupling system for RF switches based on phase change material

An inductance device includes a coil provided with at least one electrically conductive turn having a first portion of turn formed on a face of a first substrate, and a second portion of turn. A first end of the first portion is electrically connected to a first end of the second portion by a conductive connection, and the coil has a longitudinal axis, around which the at least one turn is formed, which is perpendicular to a dimension in thickness of the first substrate. The second portion is formed on a face of a second substrate different from the first substrate, with the face of the first substrate facing the face of the second substrate, with the conductive connection extending into an interstitial space located between the face of the first substrate and the face of the second substrate.

Inductance device and method of manufacturing the same

A packaging structure including at least one hermetically sealed cavity in which at least one microelectronic device is arranged, the cavity being formed between a substrate and at least one cap layer through which several release holes are formed. Several separated portions of metallic material are provided such that each of the separated portions of metallic material is arranged on the cap layer above and around one of the release holes and forms an individual and hermetical plug of said one of the release holes. At least one diffusion barrier layer including at least one non-metallic material is arranged on the cap layer and forms a diffusion barrier against an atmosphere outside the cavity at least around the release holes. Parts of the diffusion barrier layer are not covered by the portions of metallic material.

Packaging structure of a microelectronic device having a hermeticity improved by a diffusion barrier layer

Switch including a phase change materials based structure where only one part is activatable

Method for making a cavity, comprising steps to:

Method of making a closed cavity comprising a flap protecting the cavity when it is closed

Unit cell including a receive antenna, a transmit antenna, and including first and second radiation surfaces separated from each other by a separation area, a phase-shift circuit comprising switches, each having an on, respectively off, state, wherein the corresponding switch allows, respectively blocks, the flowing of a current between the first and second radiation surfaces; a ground plane; a first printed circuit board including a first surface provided with the receive antenna, and a second opposite surface provided with the ground plane; a wafer of a semiconductor material including a first surface provide with first and second radiation surfaces and wherein the switches are formed in the separation area, monolithically with the transmit antenna.

Transmitarray unit cell for a reconfigurable antenna

Commutator structure comprising several channels of phase change material and interdigitated control electrodes

A method for packaging a microelectronic device in an hermetically sealed cavity and managing an atmosphere of the cavity with a dedicated hole, including making said cavity between a support and a cap layer such that a sacrificial material and the device are arranged in the cavity; removing the sacrificial material through at least one release hole, and hermetically sealing the release hole; making a portion of wettable material on the cap layer, around a blind hole or a part of said outside surface corresponding to a location of said dedicated hole; making a portion of fuse material on the portion of wettable material; making the dedicated hole by etching the cap layer; and reflowing the portion of fuse material with a controlled atmosphere, forming a bump of fuse material which hermetically plugs said dedicated hole.

Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole

The invention relates to a variable-capacitance electrical capacitor comprising a first electrode and a second electrode facing the first electrode and a zone of a dielectric material arranged between said first and second electrodes characterized in that the second electrode is formed at least on one hand of a primary electrode made of an electrically conductive material and, at least on the other, of an additional electrode comprising a state-change material, the primary electrode and the additional electrode facing the first electrode, said state-change material being arranged at least partially in contact with the primary electrode and configured to alternatively adopt a high-resistivity state wherein the additional electrode is electrically insulated from the primary electrode and a low-resistivity state wherein the additional electrode is in electrical conduction with the primary electrode so as to vary the electrically active surface area of the second electrode.

Capacitor of variable capacity, comprising a layer of a phase change material, and method for varying the capacity of a capacitor

Method of hermetically sealing a hole with a fuse material, comprising the following steps: applying a portion of wettable material onto a surface such that it completely surrounds the hole made through said surface and is located outside the hole, or completely surrounds a first part of said surface corresponding to a location of the hole; applying a portion of fuse material on the portion of wettable material and on a second part of said surface located around the portion of wettable material; reflowing the portion of fuse material to form a bump of fuse material which has a shape corresponding to a part of a sphere, which is fastened only to the portion of wettable material and which hermetically plugs the hole; wherein the hole is made in said surface before reflowing the portion of fuse material.

Method of hermetically sealing a hole with a fuse material

The fabrication of a semiconductor fixed structure defining a volume, for example of a MEMS micro electro-mechanical system includes, determining thicknesses beforehand depending on the functional distances associated with elements. At least one element is formed on a substrate by thermal oxidation of the substrate so as to form an oxide layer followed by selective etching of the oxide layer so as to define the volume in an etched portion by baring the underlying substrate so as to define the element in an unetched portion, and later oxidation of the substrate so as to form an oxide layer, in order to obtain the elements at the functional distances.

Growing community of inventors

Moirans, France

Bruno Reig