Osram Opto Semiconductors Gmbh

Ams-osram International Gmbh

Osram Oled Gmbh

Bruno Jentzsch

Tansen Varghese

Korbinian Perzlmaier

Erwin Lang

Martin Rudolf Behringer

Marc Philippens

Andreas Biebersdorf

Petrus Sundgren

Peter Stauss

Christian Mueller

Julia Stolz

Ruth Boss

Frank Singer

Hubert Halbritter

Siegfried Herrmann

Sebastian Wittmann

Alvaro Gomez-Iglesias

Laura Kreiner

Jens Mueller

Kerstin Neveling

Peter Fuchs

Berthold Hahn

Stefan Illek

Alexander F Pfeuffer

Tobias Meyer

Hans-Jürgen Lugauer

Alexander Behres

Christian Lauer

Alexander Tonkikh

Ann Russell

Thomas Falck

Dean Maximilian Schoke

Tomasz Swietlik

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

U-LED, U-LED device, display and method for the same

μ-LED, μ-LED device, display for augmented reality or lighting applications

Disclosed is a method for producing a radiation-emitting semiconductor chip including the steps: —providing a semiconductor layer sequence having an active region which is designed for generating electromagnetic radiation, —producing a first recess in the semiconductor layer sequence, which fully penetrates the active region, —producing a first structure in the first recess, wherein—at least a lateral surface of the first structure facing the active region extends obliquely to at least a first lateral surface of the semiconductor layer sequence, and—the first structure is spaced apart in lateral directions from the active region. Also disclosed is a radiation-emitting semiconductor chip.

Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip

The invention relates to a semiconductor laser comprising a semiconductor layer arrangement, having an active zone for radiation generation, as well as comprising a first resonator mirror, a second resonator mirror and a resonator arranged between the first and the second resonator mirror, which ends in a direction parallel to a main surface of the semiconductor layer arrangement. The semiconductor laser also comprises a first wavelength-selective absorption element which is arranged between the semiconductor layer arrangement and the first resonator mirror.

Semiconductor laser and lidar system comprising the semiconductor laser

According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance Rof the first resonator mirror is wavelength-dependent, so that Ror a product R of Rand the reflectance Rof the second resonator mirror in a wavelength range decreases from a target wavelength λof the laser to λ+Δλ from a value R, wherein Δλ is selected as a function of a temperature-dependent shift in an emission wavelength.

Semiconductor laser and LIDAR system and also laser system with the semiconductor laser

μ-LED, μ-LED device, display and method for the same

In an embodiment a radiation emitting semiconductor chip includes a semiconductor layer sequence with a plurality of active regions and a main extension plane, wherein each active region has a main extension direction, wherein each active region is configured to emit electromagnetic radiation from an emitter region extending parallel to the main extension plane, wherein at least two active regions overlap in plan view, wherein the emitter regions are arranged at grid points of a regular grid connected by at least one grid line, and wherein the main extension direction of at least one active region encloses an angle of at least 10° and at most 80° with the grid lines of the regular grid.

Radiation emitting semiconductor chip and radiation emitting semiconductor device

The invention relates to a radiation-emitting semiconductor chip comprising a semiconductor layer sequence having at least two active regions which generate electromagnetic radiation during operation and at least one reflective outer surface which is arranged to the side of each active region wherein the reflective outer surface includes an angle of at least 35° and at most 55° with a main extension plane of the semiconductor chip. The invention also relates to a method for producing a radiation-emitting semiconductor chip.

Radiation-emitting semiconductor chip with reflective inner surface and anti-reflective coating and method for producing thereof

A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.

Phase-coupled laser assembly and method for producing a phase-coupled laser assembly

A radiation-emitting semiconductor chip includes a semiconductor layer sequence having an active layer for generating electromagnetic radiation. The semiconductor chip also includes a reflector at a side surface of the semiconductor layer sequence having a reflector surface facing the semiconductor layer sequence and extending obliquely with respect to the active layer. The semiconductor chip further includes a top surface extending transversely with respect to the reflector surface and having a first emission region. The semiconductor chip additionally includes a further reflector situated opposite the reflector. The semiconductor chip is configured such that electromagnetic radiation generated in the active layer during operation is reflected by the reflector and emerges from the semiconductor chip via the emission region of the top surface. A main emission direction of the emerging electromagnetic radiation together with the active layer form an emergence angle of between 30° and 80° inclusive.

Radiation-emitting semiconductor chip, rear light for a motor vehicle, motor vehicle, and optical distance measurement device

An optoelectronic semiconductor device comprises a plurality of laser devices. Each of the laser devices is configured to emit electromagnetic radiation. The laser devices are horizontally arranged. A first laser device of the plurality of laser devices is configured to emit electromagnetic radiation having a first wavelength different from the wavelength of a further laser device of the plurality of laser devices. A difference between the first wavelength and the wavelength of the further laser device is less than 20 nm.

Optoelectronic semiconductor device and method of manufacturing an optoelectronic semiconductor device

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45&#xb0; to a resonator axis with a tolerance of at most 10&#xb0;. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Semiconductor laser

Growing community of inventors

Wuppertal, Germany

Bruno Jentzsch