Thales

Bruno Jacquet

Raoul Rodriguez

Jean Maynard

Emile Tonello

Vincent Lavalette

Michel Perrel

A memory device automatically correcting the effect of collisions of high-energy particles, comprising at least one memory cell, and further comprising: retention means for retaining, for a determined period, a single copy of the stored value stored in said memory cell; detection means for detecting a change of state of said memory cell, by comparing the stored value stored in said memory cell with the value in retention in said retention means; and management means suitable for determining whether a detected change of state of said memory cell is due to a high-energy particle and, in which case, to automatically command a reloading of the stored value stored in said retention means into said memory cell.

Memory device correcting the effect of collision of high-energy particles

A pulsed electrical remote control interface for an equipment item including a plurality of functions to be controlled includes at least a first command input associated with a first command line (TC-Type, TC-Type-plus, TC-Type-minus) for selecting at least one function (RF ON, RF OFF, ALC ON, ALC OFF, FCA UP, FCA DOWN, GCA UP, GCA DOWN, SCA UP, SCA DOWN, INHIBIT) to be performed from the plurality of functions and at least one second command input associated with a second command line (EXE, EXE-UP-ON, EXE-DOWN-OFF) for executing the selected function, each command input being associated with an outbound pulsed command line and a return line, the return line possibly being shared with a number of outbound lines. Applicable to the control of any kind of equipment that includes a large number of functions and requires a large number of pulsed command signals, notably in the field of satellite communication systems.

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Villeneuve Tolosane, France

Bruno Jacquet