S.o.i.tec Silicon on Insulator Technologies

Soitec

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Commissariat a L'energie Atomique

Commissariat À L'energie Atomique (Cea)

Saint-augustin Canada Electric Inc.

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commisariat À L'énergie Atomique (Cea)

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.v.

Bruno Ghyselen

Fabrice Letertre

Olivier Rayssac

Cécile Aulnette

Takeshi Akatsu

Bénédite Osternaud

Jean-Marc Bethoux

Hubert Moriceau

Thomas Skotnicki

Chantal Arena

Carlos Mazure

Bruce Faure

Daniel Bensahel

Thierry Barge

Emmanuel Arene

Pierre Rayssac, Legal Representative

Bernard Aspar

Didier Landru

Rainer Klaus Krause

Alice Boussagol

Gisèle Rayssac, Legal Representative

Oliver Rayssac

Kiyoshi Mitani

Walter Schwarzenbach

Nicolas Daval

Gweltaz Gaudin

Ian Cayrefourcq

Chrystelle Lagahe

Junichiro Furihata

Yves-Mathieu Vaillant

Ionut Radu

Lamine Benaissa

Frank Dimroth

Jean-Marc Waechter

Toshiaki Iwamatsu

Thuan Truong

Thibaut Maurice

Caroline Coutier

Aziz Alami-Idrissi

Hideki Naruoka

Yves Mathieu Le Vaillant

Atsushi Iwasaki

Carlos Mazuré

Benoit Bataillou

Thierry Salvetat

Yves-Mathieu Le Vaillant

Christelle Lagahe

Giséle Rayssac, Legal Representative

François-Xavier Darras

Cecile Aulnette

Cecile Berne

Benoît Bataillou

Benoĩt Bataillou

Fréderic Allibert

Alain Delpy

David Herisson

Céline Cailler

Andreas W Bett

Corrado Sciancalepore

Bénédicte Osternaud

Richard Fontaniere

A method for producing a device comprising a membrane of piezoelectric nature above at least one cavity comprises:

Membrane transfer method

A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.

Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT

A process for producing a monocrystalline layer of LNO material comprises the transfer of a monocrystalline seed layer of YSZ material to a carrier substrate of silicon material followed by epitaxial growth of the monocrystalline layer of LNO material.

Method for producing a monocrystalline layer of lithium niobate by transferring a seed layer of yttria-stabilized zirconia to a silicon carrier substrate and epitaxially growing the monocrystalline layer of lithium niobate and substrate for epitaxial growth of a monocrystalline layer of lithium niobate

A method of manufacturing a monocrystalline layer comprises the following successive steps: providing a donor substrate comprising a piezoelectric material of composition ABO, where A consists of at least one element from among Li, Na, K, H, Ca; and B consists of at least one element from among Nb, Ta, Sb, V; providing a receiver substrate, transferring a layer called the 'seed layer' from the donor substrate on to the receiver substrate, such that the seed layer is at the bonding interface, followed by thinning of the donor substrate layer; and growing a monocrystalline layer of composition A'B′Oon piezoelectric material ABOof the seed layer, where A′ consists of a least one of the following elements Li, Na, K, H; B′ consists of a least one of the following elements Nb, Ta, Sb, V; and A′ is different from A or B′ is different from B.

Method for the production of a single-crystal film, in particular piezoelectric

A method for sealing cavities using membranes, the method including a) forming cavities arranged in a matrix, of a depth p, a characteristic dimension a, and spaced apart by a spacing b; and b) forming membranes, sealing the cavities, by transferring a sealing film. The method further includes a step a1), executed before step b), of forming a first contour on the front face and/or on the sealing face, the first contour comprising a first trench having a width L and a first depth p1, the formation of the first contour being executed such that after step b) the cavities are circumscribed by the first contour, said first contour being at a distance G from the cavities between one-fifth of b and five b.

Method for sealing cavities using membranes

A design process is used for designing a device comprising a plurality of micro-machined elements, each comprising a flexible membrane, the elements being arranged in a plane in a determined topology. The design process comprises a step of defining the determined topology so that it has a character compatible with a generic substrate having cavities, the characteristics of which are pre-established. Each flexible membrane of the micro-machined elements is associated with one cavity of the generic substrate. The present disclosure also relates to a fabrication process for fabricating a device comprising a plurality of micro-machined elements, and to this device itself, wherein only some of the pairs of cavities and flexible membranes are configured to form a set of functional micro-machined elements.

Methods for designing and producing a device comprising an array of micro-machined elements, and device produced by said methods

A process for transferring blocks from a donor to a receiver substrate, comprises: arranging a mask facing a free surface of the donor substrate, the mask having one or more openings that expose the free surface of the donor substrate, the openings distributed according to a given pattern; forming, by ion implantation through the mask, an embrittlement plane in the donor substrate vertically in line with at least one region exposed through the mask, the embrittlement plane delimiting a respective surface region; forming a block that is raised relative to the free surface of the donor substrate localized vertically in line with each respective embrittlement plane, the block comprising the respective surface region; bonding the donor substrate to the receiver substrate via each block located at the bonding interface, after removing the mask; and detaching the donor substrate along the localized embrittlement planes to transfer blocks onto the receiver substrate.

Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement plane

A method for manufacturing a film on a support having a non-flat surface comprises: providing a donor substrate having a non-flat surface, forming an embrittlement zone in the donor substrate so as to delimit the film to be transferred, forming the support by deposition on the non-flat surface of the film to be transferred, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the support.

Method for manufacturing a film on a support having a non-flat surface

A process for producing a monocrystalline layer of AlN material comprises the transfer of a monocrystalline seed layer of SiC-6H material to a carrier substrate of silicon material, followed by the epitaxial growth of the monocrystalline layer of AlN material.

Process for producing a monoocrystalline layer of AlN material by transferring a SiC-6H seed to a Si carrier substrate and epitaxially growing the monocrystalline layer of AlN material and substrate for the epitaxial growth of a monocrystalline layer of AlN material

A method for manufacturing a film, notably monocrystalline, on a flexible sheet, comprises the following steps: providing a donor substrate, forming an embrittlement zone in the donor substrate so as to delimit the film, forming the flexible sheet by deposition over the surface of the film, and detaching the donor substrate along the embrittlement zone so as to transfer the film onto the flexible sheet.

Method for manufacturing a film on a flexible sheet

A process for producing a monocrystalline layer of GaAs material comprises the transfer of a monocrystalline seed layer of SrTiOmaterial to a carrier substrate of silicon material followed by epitaxial growth of a monocrystalline layer of GaAs material.

Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material

A method for manufacturing a device comprising a membrane extending over a useful cavity, the method comprising: providing a generic structure comprising a surface layer extending in a main plane and arranged on a first face of a support substrate, the support substrate comprising elementary cavities opening under the surface layer and partitions delimiting each elementary cavity, the partitions having top surfaces that form all or part of the first face of the support substrate; defining a group of adjacent elementary cavities, such that a contour of the group of elementary cavities corresponds, in the main plane, to a contour of the useful cavity; and removing the partitions situated within the contour of the group of elementary cavities, in order to form the useful cavity, and to free the surface layer arranged above the useful cavity and forming the membrane.

Method for manufacturing a device comprising a membrane extending over a cavity

A microsensor for detecting ions in a fluid, comprises: a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate disposed above the active region, an active layer, in which the active region is formed, a dielectric layer positioned beneath the active layer, a support substrate disposed under the dielectric layer and comprising at least one buried cavity located plumb with the gate of the field-effect transistor in order to receive the fluid.

Micro-sensor for detecting chemical species and associated manufacturing method

A process for producing a monocrystalline layer of diamond or iridium material comprises transferring a monocrystalline seed layer of SrTiOmaterial onto a carrier substrate of silicon material, followed by epitaxial growth of the monocrystalline layer of diamond or iridium material.

Method for manufacturing a monocrystalline layer of diamond or iridium material and substrate for epitaxially growing a monocrystalline layer of diamond or iridium material

A process for manufacturing a two-dimensional film of a group IV material having a hexagonal crystalline structure, in particular, graphene, comprises formation of a growth substrate, comprising the transfer of a single-crystal metal film suitable for the growth of the two-dimensional film on a support substrate, and epitaxial growth of the two-dimensional film on the metal film of the substrate.

Process for manufacturing a two-dimensional film of hexagonal crystalline structure using epitaxial growth on a transferred thin metal film

Growing community of inventors

Seyssinet, France

Bruno Ghyselen