Thomson-csf

Bruno Gerard

Didier Pribat

Pierre Legagneux

Daniel Pribat

The disclosure relates to the field of monocrystalline thin layers deposited on a substrate having an identical or a different nature, from a vapor phase. On the substrate made of monocrystalline material A, a cavity is built, determined by one face of the substrate and one face of a layer made of a material D in such a way that there can be neither nucleation nor growth on the faces exposed to the vapor phase. The growth is done from a seed made of monocrystalline material B located between two faces of the substrate and of the layer. The seed made of monocrystalline material B may be of a nature different from that of the substrate (for example, substrate=silicon and material B=GaAs) and is made, for example, by MBE or MOCVD. The material C to be made to grow is different from the material B of the seed. The material C is, for example, InP and the growth is done by VPE.

Method for the making heteroepitaxial thin layers and electronic devices

A method according to which a layer of a semiconductor material is made on a substrate by growth in a confinement space defined by this substrate and by a confinement layer, this growth being achieved from a seed. The cross-section of the seed, substantially perpendicular to the general direction of growth, possesses a thick central part framed by two thinned lateral parts. The confinement space has the same cross-section as the seed.

Growing community of inventors

Chelles, France

Bruno Gerard