Commissariat a L'energie Atomique

Ngk Insulators, Inc.

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Centre National De La Recherche Scientifique

Université Grenoble Alpes

Bruno Daudin

Yuji Hori

Mitsuhiro Tanaka

Osamu Oda

Eva Monroy

Marc Delaunay

Julien Pernot

Bruno Gayral

Henri Mariette

Edith Bellet-Amalric

Julien Brault

Gwenole Jacopin

A light-emitting diode is provided, including: a first layer of n-doped AlGaInN, with X1>0 and X1+Y1≤1; a second layer of p-doped AlGaInN, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

Light-emitting diode comprising a hybrid structure formed of layers and nanowire

A process for producing a structure () comprising a membrane () of a first material, in particular indium-tin oxide, in contact with receiving ends () of a plurality of nanowires (), the process comprising

Nanowire structure and method for producing such a structure

The process for the manufacture of a light-emitting diode comprises the following stages: the formation of a stack () of layers intended to emit light comprising first (), second () and third () layers of aluminum gallium nitride, the said second layer (), positioned between the first and third layers (), having an aluminum gallium nitride composition different from that of the first and third layers (); and the implementation of a demixing of the second layer () of aluminum gallium nitride carried out after formation of the said second layer.

Method of manufacturing a light emitting diode comprising a layer of AlGaN  heterogeneous

The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula AlGaN, wherein the atomic number x represents the number between 0 and 1 with a p-type electron-accepting dopant, as well as a co-doping step with a codopant capable of modifying the structure of the valency band. The invention also concerns a semiconductor as well as its use in electronics or optoelectronics. The invention further concerns a device as well as a diode using such a semiconductor.

Method for preparing a semiconductor

In formation of a quantum dot structure in a light emitting layer, a matrix region (an n-type conductive layer and matrix layers) is formed on a growth underlying layer of AlN whose abundance ratio of Al is higher (or whose lattice constant is smaller) than that in the matrix region by an MBE technique, thereby to realize conditions where compression stress is caused in an in-plane direction perpendicular to the direction of growth of the matrix region, and then to form island crystals by self-organization in the presence of this compression stress. The compression stress inhibits an increase in lattice constant caused by the reduced abundance ratio of Al in the matrix region, i.e., to compensate for a difference in lattice constant between the island crystals and the matrix region. The compression stress functions to enlarge compositional limits for formation of the island crystals by self-organization to the Ga-rich side.

Semiconductor layered structure and its method of formation, and light emitting device

The invention relates to a process for protecting the surface of an SiC substrate. This process comprises deposition of a temporary protection layer with a thickness equal to at least two monolayers on the surface of the substrate to be protected, the protection layer being composed of gallium nitride. Advantageously, the protection layer of gallium nitride may be obtained by depositing gallium on the surface of the substrate, followed by nitridation of the gallium layer formed. The invention also relates to an 'epiready' substrate. This substrate comprises an SiC substrate for which at least one surface is covered by a temporary protection layer, the said layer being composed of GaN and being two monolayers thick.

Protection of the SiC surface by a GaN layer

A group III nitride underlayer including at least Al, having a dislocation density of &#x2266;1&#xd7;10/cmand a (002) plane X-ray rocking curve half-width value of &#x2266;200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is &#x2267;50% and in which a carrier density is &#x2267;1&#xd7;10/cm. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of &#x2267;50%.

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La Tronche, France

Bruno Daudin