Bayer Aktiengesellschaft

Bbc Brown, Boveri & Company, Limited

Bbc Brown Boveri Ag

Bruno Broich

Jurgen Hocker

Jens Gobrecht

Peter Roggwiller

Friedrich Jonas

Horst Gruning

Jan Voboril

Hans K Muller

In a power semiconductor component having a so-called 'recessed-gate' structure on the cathode side, the large-area control structure consisting of cathode fingers (1) and a lower-lying gate level (2) is divided into a plurality of small-area control zones (25a, 25b) which in each case by themselves are soldered to a cathode block (13a, 13b). This creates high-power components without the possibility of excessive thermal stresses occurring during load cycles.

Power semiconductor component

A field-controlled thyristor having a sequence of layers consisting of anode layer, channel layer and gate regions and cathode regions, which regions are alternately arranged at the cathode side, wherein an improvement in the turn-off gain is achieved by a p-type doping of the side walls of the troughs which separate the cathode regions from each other, and/or by an additional intermediate layer which has low p-type doping and which is arranged between adjacent gate regions.

Disconnectable power semiconductor component

A power semiconductor module including a cascade circuit of a low-voltage high-current MOSFET and of a bipolar semiconductor element, for example a field-controlled thyristor, GTO thyristor or Darlington transistor, as a hybrid combination. In this manner, it is possible to achieve a construction, which exhibits low induction and which saves space and which at the same time permits efficient cooling of the module.

Power semiconductor module

Multi-layered sheet structures comprising at least two layers, at least one of which consists of optionally doped polyacetylene, and at least one other layer joined thereto consists of a plastics material or inorganic material forming films or coatings, and processes for the production thereof.

Multi-layered sheet structures

A process for the production of a suspension of doped polyacetylene particles, in which process acetylene is initially polymerized in a suspending agent with the formation of a suspension of polyacetylene particles in 'burr' form, the catalyst is deactivated or removed, the solvent is optionally exchanged, and p- or n-doping is then carried out by adding a dopant additive in substance or in solution to the suspension.

Particulate doped polyacetylene

Complex salts of 7,7,8,8-tetracyano-p-quinodimethane having high electric conductivity, process for the preparation thereof and the use thereof as electric conductors, semiconductors or photoconductors and for antistatic finishing of plastics products.

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Baden, Switzerland

Bruno Broich