Northwestern University

Bruce W Wessels

Joseph S Friedman

Steven J May

Nikhil Rangaraju

Bruce A Block

Zhifu Liu

Tobin Jay Marks

Mercouri G Kanatzidis

Lauren Marie Tonge

Gokhan Memik

Michael J Nystrom

Jiming Zhang

Darrin S Richeson

Alan Varteres Sahakian

Wenwen Lin

David J Towner

Douglas M Gill

Peter D Girouard

Anthony L Meier

Feng Niu

Brent H Hoerman

John A Peters

Gregory M Ford

Seng Tiong Ho

Peng L Wang

Yehea Ismail

Ling Q Qian

Pao T Lin

Young Kyu Jeong

Pingsheng Tang

Pei-Jih Wang

Methods and devices for detecting incident radiation, such as incident X-rays, gamma-rays, and/or alpha particle radiation are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds, including solid solutions, having the formula ABX, where A represents Tl or In, B represents Sn or Pb, and X represents Br or I, as photoelectric materials.

Inorganic ternary halide semiconductors for hard radiation detection

Ferroelectric barium titanate (BaTiO) epitaxial films grown by metal-organic chemical vapor deposition using a barium precursor having a low melting point and a stable vapor pressure.

Epitaxial barium titanate thin films using a highly volatile Ba(hfa)triglyme precursor

Methods and devices for detecting incident radiation, such as incident x-rays or gamma-rays, are provided. The methods and devices use high purity, high quality single-crystals of inorganic semiconductor compounds having the formula APX, where A represents Pb or Sn and X represents S or Se, as photoelectric materials.

Chalco-phosphate-based hard radiation detectors

Barium titanate thin film waveguides and related modulator and devices with photonic crystal structures to promote wide bandwidths, low operating voltages and small footprint.

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Ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes

A switch comprising a spin-transistor and a first control wire. The spin-transistor is configured so that when a magnetic field applied to the spin-transistor is less than a threshold value, the transistor is in a conductive state in which electric current flows through the spin-transistor. When the magnetic field applied to the spin-transistor is greater than the threshold value, the spin-transistor is in a resistive state in which the electric current flowing through the spin-transistor is substantially reduced. The first control wire is for receiving a current to affect the magnetic field applied to the spin-transistor.

Emitter-coupled spin-transistor logic

Group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes and related methods of monitoring magnetoresistance

An emitter-coupled spin-transistor includes an emitter, a collector and a base. A first control wire receives an input current to create a magnetic field that affects amplification of the spin-transistor. A second transistor also includes an emitter, a collector and a base, where the emitter of the second transistor is coupled to the emitter of the spin-transistor to provide a logic circuit.

Systems and methods can perform automatic computation developed using carbon nanotubes and graphene nanoribbons and/or InSb p-n bilayer channel avalanche diodes and wires. Spin logic can provide improvements in speed, power, and area, promising to be a high-performance logic family for the next generation of computing. The systems and methods can replace CMOS, for example, for general computing applications.

System and method for spin logic

In one aspect of the present invention, the semiconductor device is a bipolar magnetic junction transistor (MJT), and includes a first non-magnetic semiconductor layer, a second non-magnetic semiconductor layer, and a magnetic semiconductor layer. The first non-magnetic semiconductor layer has majority charge carriers of a first polarity. The second non-magnetic semiconductor layer is disposed adjacent to the first non-magnetic semiconductor layer such that a first junction is formed at a first interface region between the first non-magnetic semiconductor layer and the second non-magnetic semiconductor layer. The magnetic semiconductor layer has majority charge carriers of the first polarity, and is disposed adjacent to the second non-magnetic semiconductor layer such that a second junction is formed at a second interface region between the second non-magnetic semiconductor layer and the magnetic semiconductor layer.

Bipolar magnetic junction transistor with magnetoamplification and applications of same

In one aspect, the invention relates to logic cells that utilize one or more of spin diodes. By placing one or two control wires on the side of the spin diodes to generate magnetic fields in the spin diodes due to input currents, the logic cell can be changed from one logic gate to another logic gate. The unique feature leads to field logic devices in which simple instructions can be used to construct a whole new set of logic gates.

Logic cells based on spin diode and applications of same

In one aspect, the invention relates to programmable logic that utilizes one or more of magnetic diodes. By changing magnetic fields generated in the magnetic diodes due to input signals, the programmable logic can be changed from one logic gate to another logic gate. The unique feature leads to field reprogrammable logic devices in which simple instructions can be used to construct a whole new set of logic gates.

Programmable logic based on a magnetic diode and applications of same

Methods of use of ferromagnetic Group III-V semiconductor/non-magnetic Group III-V semiconductor heterojunctions, with a magnetodiode device, to detect heterojunction magnetoresistance responsive to an applied magnetic field.

Method of using group III-V ferromagnetic/non-magnetic semiconductor heterojunctions and magnetodiodes

Apparatus and methods for second harmonic generation with a waveguide. In one embodiment, a method includes the steps of providing a waveguide, wherein the waveguide has a substrate, and a polydomain epitaxial thin film on the substrate, wherein the polydomain epitaxial thin film defines a plane and has a first surface and a second, opposite surface defining a body portion of the polydomain epitaxial thin film therebetween with a film thickness, l, and wherein the polydomain epitaxial thin film has a coherence length, l, and exposing the waveguide to an incident photon beam with a wavelength and a focal point such that the incident photon beam is incident to the plane of the polydomain epitaxial thin film with an angle &#x3b8; that is formed between the incident beam and the plane of the polydomain epitaxial thin film and satisfies the condition of 0&#x3c;&#x3b8;&#x3c;90, wherein the polydomain epitaxial thin film is formed with the following condition satisfied: l&#x3c;l. As generated, the second harmonic generation has a conversion efficiency substantially independent of the wavelength of the incident photon beam over the visible spectra range.

Growing community of inventors

Wilmette, IL, United States of America

Bruce W Wessels