University of California

Toyota Motor Engineering & Manufacturing North America, Inc.

Intel Corporation

University Patents, Inc.

Bruce S Dunn

Sarah H Tolbert

John S Wang

Torsten Brezesinski

George Gruner

Leland Smith

Ajey Poovannummoottil Jacob

Fred Wudl

Chi On Chui

Monique Nathalie Richard

Daniel Membreno

John Muldoon

Chang-Jin Kim

Leonard H Rome

Valerie A Kickhoefer

Peter E Morgan

Janet Hur

Jeffrey I Zink

Kimber Lee Stamm

Stacey A Yamanaka

Kimber L Stamm Masias

Lisa M Ellerby

Terri Chai Lin

Shaily Mahendra

Meng Wang

Joan S Valentine

Kurt Star

Erik Menke

John Cook

Hyungseok Kim

Clinton Nishida

Gregory C Farrington

Esther Hui-Jen Lan

Filippo Marchioni

Grant Umeda

Brittnee Veldman

Fumito Nishida

A sol-gel vault which comprises a complex between a vault particle and a sol-gel. The vault particle comprises one or more one or more passenger molecules. At least one of the one or more passenger molecules is an mINT passenger molecule. At least one of the one or more passenger molecules is a protein. At least one of the one or more passenger molecules is an enzyme. The sol-gel is a silica-based sol-gel.

Sol-gel vaults and methods of making and using thereof

A mesoporous, nanocrystalline, metal oxide construct particularly suited for capacitive energy storage that has an architecture with short diffusion path lengths and large surface areas and a method for production are provided. Energy density is substantially increased without compromising the capacitive charge storage kinetics and electrode demonstrates long term cycling stability. Charge storage devices with electrodes using the construct can use three different charge storage mechanisms immersed in an electrolyte: (1) cations can be stored in a thin double layer at the electrode/electrolyte interface (non-faradaic mechanism); (2) cations can interact with the bulk of an electroactive material which then undergoes a redox reaction or phase change, as in conventional batteries (faradaic mechanism); or (3) cations can electrochemically adsorb onto the surface of a material through charge transfer processes (faradaic mechanism).

Mesoporous nanocrystalline film architecture for capacitive storage devices

A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.

Metal chalcogenides for pseudocapacitive applications

Disclosed is a microbattery having a substrate with a surface that includes an array of posts extending from the surface of the substrate to form a first electrode. An selectively-cured electrolyte forms a conformal coating over the surface of the substrate and the array of posts to provide a coated electrode. A second electrode substantially encases the coated electrode.

Microbattery

Embodiments of the present disclosure relate to a solid-state supercapacitor. The solid-state supercapacitor includes a first electrode, a second electrode, and a solid-state ionogel structure between the first electrode and the second electrode. The solid-state ionogel structure prevents direct electrical contact between the first electrode and the second electrode. Further, the solid-state ionogel structure substantially fills voids inside the first electrode and the second electrode.

Solid-state supercapacitor

An electrochemical cell includes an anode having a metal material having an oxygen containing layer. The electrochemical cell also includes a cathode and an electrolyte. The anode includes a chemically bonded protective layer formed by reacting a D or P block precursor with the oxygen containing layer.

Chemical protection of metal surface

A composition for use in an electrochemical cell is disclosed wherein the composition includes a clean metal substantially free of impurities and a layer of protective material in contact with the clean metal. Further disclosed is an electrochemical cell including a metal film comprising a clean metal substantially free of impurities. The electrochemical cell may further include an electrolyte and a layer of protective material disposed between the electrolyte and the metal film. A process for manufacturing an electrode is further disclosed including preparing a metal film comprising a clean metal substantially free of impurities and depositing a layer of protective material on to the metal film.

Electrode compositions and processes

An active biological material encapsulated in a glass is formed using a sol-gel process. A metal alkoxide is mixed with water and exposed to ultrasonic energy at a pH.ltoreq.2 to form a single phase solution which is then buffered to a pH between about 5 and 7. The buffered solution is then mixed with the active biological material and the resultant gel is aged and dried. The dried product is a transparent porous glass with substantially all of the added active biological material encapsulated therein, the biological material retaining a high level of activity.

Sol-gel encapsulated enzyme

A method for growing crystals of sodium beta' alumina is described. The crystals are grown by Czochralski type processes or analogous methods wherein single crystals are formed from a flux or melt. The melt is a eutectic type liquid primarily containing Na or K, (Li, Mg or other divalent element, e.g. Ni.sup.2+, Co.sup.2+, Cr.sup.2+, Fe.sup.2+, etc.) Al, in proportions to produce beta' alumina. To lower the melt temperature to where e.g. Na.sub.2 MgAl.sub.10 O.sub.17 beta' or Na.sub.2 Li.sub.1/2 Al.sub.11/2.degree.17 beta' can crystallize in its stability region (approximately less than 1700.degree. C. for the Mg version and approximately less than 1600.degree. C. for the Li version) high valent ions, which do not enter the structure, particularly V.sup.5+, Nb.sup.5+, Ta.sup.5+, Zr.sup.4+ and/or Hf.sup.4+ are added to the melt. The method has allowed the growth of single crystals of the Li-stabilized sodium and potassium varieties for the first time.

Flux growth of sodium beta' alumina

Beta double prime alumina is provided having a sensible amount of at least one polyvalent cationic species intercalated therein. In accordance with a preferred embodiment, such beta double prime alumina is provided having trivalent and/or tetravalent cationic species intercalated therein, especially species derived from the lanthanide and actinide series of elements. Certain of the foregoing materials exhibit phosphorescence or fluorescence, and some are believed to be capable of producing laser emission upon suitable irradiation. Methods for modifying beta double prime aluminas comprising contacting crystals of the aluminas with polyvalent cation-containing salts such as in the molten state or in the gaseous state are also provided. Laser and other optical devies are disclosed employing the modified beta double prime aluminas of this invention.

Optical materials from intercalation of polyvalent cations in beta

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Los Angeles, CA, United States of America

Bruce S Dunn