Lsi Logic Corporation

Lsi Corporation

Other

Nantero, Inc.

Portland State University

Bruce Joseph Whitefield

David A Abercrombie

James McNames

Prabhakar Pati Tripathi

David J Sturtevant

Chi-Hung Wang

Roger Y B Young

Steven E Reder

Robert Madge

Kevin Cota

David R Turner

Nima A Behkami

Jason W McNichols

ChandraSekhar Desu

Claude Louis Bertin

Thomas Rueckes

Michael J Berman

Derryl D J Allman

Manu Rehani

Joseph Cowan

Hiroshi Mizuno

Ann I Kang

John A Knoch

Paul J Rudolph

Byungsool Moon

Xiao Li

David Ambercrombie

David A Abarcrombie

Roger Young

Attila Balazs

Paul Szasz

Russell Whaley

Ashwin Ramachandran

This patent is for a clamping mechanism for a two wheel panel dolly which is operated by turning a handle attached to the wheel axle. A threaded section of the axle is engaged with a threaded base clamp so that axle rotation drives the clamp along the axle to firmly grip a panel between the driven clamp and a the face of second clamp. Clamps are configured with different spacing between faces on opposite sides of the axle so that a wide range of panel widths can be accommodated with a relatively short clamping travel distance.

Clamping mechanism for a two wheel panel dolly

A graphical profile map for integrated circuits on a substrate. The graphical profile map includes a depiction of die placement boundaries and shot placement boundaries for the integrated circuits on the substrate. Also included are integrated circuit property information contours, where the contours are not limited to either of the die placement boundaries or the shot placement boundaries. In this manner, three key pieces of information for the integrated circuits are presented, including integrated circuit property information, die placement, and shot placement. Because these three pieces of information are presented in a graphical form, it is much easier to interpret the information. For example, it is much easier to determine which shot and die placements have properties that are at risk, and which shot and die placements have adequate property profiles.

Yield profile manipulator

Incorporation of a sensor, such as an optical or laser based sensor, into a wafer edge processing unit, such as a WEE unit or mechanism. This sensor enables the WEE unit to be referenced to the wafer edge. Specifically, the sensor can be used to place a WEE unit in a fixed but accurate location at the beginning of the wafer edge expose process. Another approach is to have the WEE drive controller actively follow the edge of the wafer as it rotates during the WEE process, which has the advantage of compensating for any wafer centering errors as well as diameter and placement errors. In yet another approach, the edge sensor is used to sense and track the edge of a previous layer WEE pattern. The sensor can also facilitate the measuring of a distance from a wafer edge to a WEE edge feature.

Wafer edge expose alignment method

An embodiment of the present invention provides a method to utilize data from many different die sizes and products so that highly detailed wafer profiles can be generated that have an improved signal to noise ratio and spatial resolution. Instead of being limited to single die size like normal wafer maps, this method takes advantage of multiple die sizes and their variation in placement on the wafer to increase the information available about the wafer patterns.

Method for calculating high-resolution wafer parameter profiles

A method of forming a carbon nanotube fuse by depositing a carbon nanotube layer, then depositing a cap layer directly over the carbon nanotube layer. The cap layer is formed of a material that has an insufficient amount of oxygen to significantly oxidize the carbon nanotube layer under operating conditions, and is otherwise sufficiently robust to protect the carbon nanotube layer from oxygen and plasmas. A photoresist layer is formed over the cap layer, and the photoresist layer is patterned to define a desired size of fuse. Both the cap layer and the carbon nanotube layer are completely etched, without removing the photoresist layer, to define the fuse having two ends in the carbon nanotube layer. Just the cap layer is etched, without removing the photoresist layer, so as to reduce the cap layer by a desired amount at the edges of the cap layer under the photoresist layer, without damaging the carbon nanotube layer. The photoresist layer is removed, and electrically conductive contacts are formed on each of the two ends of the fuse.

Nanotube fuse structure

A semiconductor chip is provided which includes active and inactive IP cores. The spaces on the metal layer associated with the inactive IP cores includes voltage contrast inspection structures. The voltage contrast inspection structures serve to provide improved planarization of the metal layer and provided improved inspection capabilities.

Voltage contrast monitor for integrated circuit defects

An apparatus includes an edge expose unit for exposing an annular area in an edge exclusion zone of a wafer to radiation having a wavelength suitable for removing a film from the wafer in the annular area and a radiation modulator coupled to the edge expose unit for modulating the radiation to pattern the film in the annular area.

Apparatus for wafer patterning to reduce edge exclusion zone

A method for creating a reference for a first position on a substrate edge. A first reference point is selected relative to a circumference of the substrate edge, and a second reference point is selected relative to a bevel of the substrate edge. A first distance along the circumference of the substrate edge between the first reference point and the first position is identified as a first coordinate, and a second distance along the bevel of the substrate edge between the second reference point and the first position is identified as a second coordinate. The first coordinate and the second coordinate are used as the reference for the first position.

Surface coordinate system

A method of determining the distance from an edge feature to a wafer edge. The wafer is put onto an image acquisition tool, and images are captured and classified. Based on the coordinates of the images and their classifications, the distance between an edge feature and the wafer edge is determined. Reference marks can be etched into the wafer to facilitate the measurement. The measurement technique is objective, and can be used to minimize the edge exclusion ring as well as defects that originate from the edge of the wafer.

Wafer edge structure measurement method

A method for selecting test site locations on a substrate, by a) specifying a subset of all test site locations on the substrate, and b) selecting a desired number of candidate test site locations from within the subset of test site locations on the substrate. c) While selecting one of the candidate test site locations and holding all others of the candidate test site locations as fixed, determining a new location for the selected one of the candidate test site locations, which new location increases a test sensitivity, as estimated by a trace of a variance-covariance matrix. d) Repeating step (c) for each candidate test site location in the subset of test site locations, to produce a finalized set of candidate test site locations, until a desired end point is attained.

Pattern detection for integrated circuit substrates

A method of removing an edge bead of a coated material on a substrate. The substrate is rotated, and a fluid that solvates the coated material is delivered. The delivery of the fluid is directed radially inward on the substrate at a rate of between about three millimeters per second and about twenty millimeters per second until a desired innermost fluid delivery position on the substrate is attained. Immediately upon attaining the desired innermost fluid delivery position on the substrate, the delivery of the fluid is directed radially outward off the substrate at a rate of more than zero millimeters per second and less than about four millimeters per second. The rotation of the substrate is ceased.

Dynamic edge bead removal

A method for determining component patterns of a raw substrate map. A subset of substrate patterns is selected from a set of substrate patterns, and combined into a composite substrate map. The substrate patterns are weighted. The composite substrate map is compared to the raw substrate map, and a degree of correlation between the composite substrate map and the raw substrate map is determined. The steps are iteratively repeated until the degree of correlation is at least a desired degree, and the weighted subset of substrate patterns is output as the component patterns of the raw substrate map.

Pattern component analysis and manipulation

A method includes steps of: (a) providing a wafer on which a film has been deposited; (b) exposing an annular area in an edge exclusion zone of the wafer to radiation having a wavelength suitable for patterning the film in the annular area; and (c) modulating the radiation while exposing the annular area to form a pattern in the film in the annular area.

Growing community of inventors

Camas, WA, United States of America

Bruce Joseph Whitefield