Sino-american Silicon Products Inc.

Mediatek Corporation

Bruce Hsu

Wen-Huai Yu

Wen-Ching Hsu

Chung-Wen Lan

Wen-Yi Wu

Yu-Min Yang

Wen-Chieh Lan

Chun-I Fan

Jin-Chuan Hsu

Kai-Yuan Pai

Hung-Sheng Chou

Suz-Hua Ho

Ya-Lu Tsai

Li Wei Li

Wen Ching Hsu

Kimsam Hsieh

A method for manufacturing an isolating layer onto a crucible includes the steps as follows: providing a spraying device for the following spraying steps; heating the crucible and measuring the heated crucible to get a first temperature; spraying a slurry on the inner wall of the crucible to form an isolating layer by a spraying unit with a predetermined spraying manner; measuring the isolating layer to get a second temperature; obtaining a value for the difference between the first and second temperatures and judging whether the difference value in a within predetermined difference scope or not, in which the predetermined difference scope is about 6&#xb0; C.&#x2dc;12&#xb0; C.; when the difference value is not in the predetermined difference scope, adjusting the predetermined spraying manner; when the difference value is in the predetermined difference scope, implementing the above spraying steps to the crucible.

Method for manufacturing isolating layer onto crucible and spraying device related thereto

A crystal growth device includes a crucible and a heater setting. The crucible has a bottom and a top opening. The heater setting surrounds the crucible and is movable relative to the crucible along a top-bottom direction of the crucible and between first and second positions. The heater setting includes a first temperature heating zone and a second temperature heating zone higher in temperature than the first temperature heating zone. The heater setting is in the first position when the crucible is in the second temperature heating zone and in the second position when the crucible is in the first temperature heating zone.

Crystal growth device

In a crystalline silicon formation apparatus, a quick cooling method is applied to the bottom of a crucible to control a growth orientation of a polycrystalline silicon grain, such that the crystal grain forms twin boundary, and the twin boundary is a symmetric grain boundary, and the crystal grain is solidified and grown upward in unidirection to form a complete polycrystalline silicon, such that defects or impurities will not form in the polycrystalline silicon easily.

Crystalline silicon formation apparatus

A gain calibration device and method for differential push-pull (DPP) tracking error signals in an optical storage system is provided. The gain calibration method processes the synthesized gain (SPPG) of the sub beam in the DPP tracking error signal components with respect to the main beam. The calibration theorem resides in controlling the objective lens of the pick-up head to form a lens-shift or controlling the tilt of the objective lens relative to the optical disc to make the synthesized DPP tracking error signals generate a correspondingly signal variation owing to the optical path deviation. The synthesized gain is calibrated to make the signal variation a minimum value, and the calibrated synthesized gain is the optimum value. In the method and device of the invention, the optimum synthesized gain of the sub beam is precisely computed without the assumptions of equal intensity of the two sub beams and symmetrical positions of the two sub beams with respect to the main beam, and without knowing the ratio of the pitch between the two sub beams to the track pitch.

Gain calibration device and method for differential push-pull tracking error signals

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Hsinchu, Taiwan

Bruce Hsu