Asml Us, Inc.

Watkins- Johnson Company

Aviza Technology Limited

Bruce E Mayer

Richard Savage

Dan Lester Cossentine

Frank S Menagh

Helder R Carvalheira

Philip A Troiani

Eric R Vaughan

Nitin K Ingle

Zheng Yuan

Robert H Chatham, Iii

A semiconductor wafer processing system including a multi-chamber module having vertically-stacked semiconductor wafer process chambers and a loadlock chamber dedicated to each semiconductor wafer process chamber. Each process chamber includes a chuck for holding a wafer during wafer processing. The multi-chamber modules may be oriented in a linear array. The system further includes an apparatus having a dual-wafer single-axis transfer arm including a monolithic arm pivotally mounted within said loadlock chamber about a single pivot axis. The apparatus is adapted to carry two wafers, one unprocessed and one processed, simultaneously between the loadlock chamber and the process chamber. A method utilizing the disclosed system is also provided.

Semiconductor wafer processing system with vertically-stacked process chambers and single-axis dual-wafer transfer system

An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.

Method and system for in-situ cleaning of semiconductor manufacturing equipment using combination chemistries

An atmospheric pressure chemical vapor deposition (APCVD) system for doping indium-oxide films with both tin and fluorine to produce dual electron donors in a non-batch process. The APCVD system has a conveyor belt and drive system for continuous processing through one or more reaction chambers separated by nitrogen purge curtains. A substrate passing through the system enters a muffle heated by several heaters and the reaction chambers are supplied by a source chemical delivery system comprising an oxidizer source, a fluorine chemical source, a nitrogen source, rotometers for the above sources, a mass flow controller, a tin chemical bubbler, heated lines, an indium chemical bubbler, a pair of water baths with heaters, and associated valving.

Method for producing highly conductive and transparent films of tin and

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Soquel, CA, United States of America

Bruce E Mayer